Diese Website verwendet Cookies. Durch die Nutzung dieser Website stimmen Sie der Verwendung von Cookies zu. Weitere Informationen finden Sie in unseren Datenschutzrichtlinie.

Die Bilder dienen nur als Referenz,

Siehe Technische Spezifikationen

FDMD8560L +BOM

Dual N-Channel PowerTrench® MOSFET 60V, 22A, 3.2mΩ

Hersteller:

onsemi
Herstellerteil #:

FDMD8560L
Datenblatt:

FDMD8560L Datenblatt (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
Number Of Channels:

2 Channel
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an FDMD8560L

FDMD8560L Allgemeine Beschreibung

Mosfet, Dual N-Ch, 60V, 93A, Pqfn-10; Transistor Polarity:dual N Channel; Continuous Drain Current Id:93A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.0025Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Powerrohs Compliant: Yes

Hauptmerkmale

Compact Design
Easy Installation
Safe and Reliable Operation
Low Power Consumption
High Efficiency
Fast Charging Capabilities
Metal Can Epoxy Package
Improved Thermal Dissipation
Excellent Heat Resistance
Long Product Life
Precise Control System
Stable Operation Performance

Anwendung

Suitable for a variety of purposes
Versatile and long-lasting
Recommended for multiple applications

Spezifikationen

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	2 Channel	Vds - Drain-Source Breakdown Voltage	60 V
Id - Continuous Drain Current	22 A	Rds On - Drain-Source Resistance	5.4 mOhms, 5.4 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	1 V
Qg - Gate Charge	92 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	2.2 W
Channel Mode	Enhancement	Series	FDMD8560L
Configuration	Dual	Fall Time	11 ns, 11 ns
Forward Transconductance - Min	98 S, 98 S	Height	0.8 mm
Length	3.3 mm	Product Type	MOSFET
Rise Time	15 ns, 15 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	2 N-Channel
Typical Turn-Off Delay Time	57 ns, 57 ns	Typical Turn-On Delay Time	20 ns, 20 ns
Width	3.3 mm	Unit Weight	0.003346 oz
Source Content uid	FDMD8560L	Pbfree Code	Yes
Part Life Cycle Code	End Of Life	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	4 Weeks
Avalanche Energy Rating (Eas)	384 mJ	Case Connection	DRAIN SOURCE
DS Breakdown Voltage-Min	60 V	Drain Current-Max (Abs) (ID)	93 A
Drain Current-Max (ID)	93 A	Drain-source On Resistance-Max	0.0032 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	Feedback Cap-Max (Crss)	60 pF
JEDEC-95 Code	MO-240AA	JESD-30 Code	R-PDSO-N8
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	2	Number of Terminals	8
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Operating Temperature-Min	-55 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	48 W
Pulsed Drain Current-Max (IDM)	550 A	Surface Mount	YES
Terminal Finish	MATTE TIN	Terminal Form	NO LEAD
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING	Transistor Element Material	SILICON
Turn-off Time-Max (toff)	110 ns	Turn-on Time-Max (ton)	61 ns

Servicerichtlinien und andere

After-Sales- und Abwicklungsbezogen

Zahlung

Bezahlverfahren

TT/Überweisung

Paypal

Western Union

Geldgramm

Für alternative Zahlungskanäle kontaktieren Sie uns bitte unter:

[email protected]

Versand & Verpackung

Versandart

Fedex

UPS

DHL

NTN

Verpackung

AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..