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FDMS3572 +BOM

Describing FDMS3572, it's a MOSFET with N-channel configuration, designed for high power applications with its UltraFET PowerTrench technology

FDMS3572 Allgemeine Beschreibung

The FDMS3572 UltraFET device is engineered to deliver exceptional performance in power conversion applications. With its optimized features such as low RDS(on), low ESR, low total and Miller gate charge, this device sets a new standard for efficiency in high frequency DC to DC converters. By incorporating cutting-edge technology, the FDMS3572 ensures superior power management with reduced losses, making it the ideal solution for demanding power conversion requirements

Hauptmerkmale

  • Silicon-based dielectric material used
  • Precise temperature control ensured
  • Fully insulated against electrical shock
  • Multi-layer ceramic construction
  • Robust surge protection included
  • Electromagnetic compatibility guaranteed

Anwendung

  • Versatile and reliable option.
  • Useful for various needs.
  • Practical and convenient choice.

Spezifikationen

Product Category MOSFET Technology Si
Mounting Style SMD/SMT Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 80 V
Id - Continuous Drain Current 8.8 A Rds On - Drain-Source Resistance 16.5 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 4 V
Qg - Gate Charge 28 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 2.5 W
Channel Mode Enhancement Tradename UltraFET
Series FDMS3572 Configuration Single
Fall Time 12 ns Height 0.8 mm
Length 6 mm Product Type MOSFET
Rise Time 13 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 24 ns Typical Turn-On Delay Time 11 ns
Width 5 mm Unit Weight 0.007408 oz

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