Bezahlverfahren
FDMS3620S +BOM
Mosfet Array 25V 17.5A, 38A 1W Surface Mount Power56
PQFN-8-
Hersteller:
onsemi
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Herstellerteil #:
FDMS3620S
-
Datenblatt:
-
Technology:
Si
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Mounting Style:
SMD/SMT
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Transistor Polarity:
N-Channel
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Number Of Channels:
2 Channel
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EDA/CAD Modelle:
All bill of materials (BOM) can be sent via email to [email protected], or fill below form to Quote for FDMS3620S, guaranteed quotes back within 12hr.
Verfügbarkeit: 7072 Stck
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FDMS3620S Allgemeine Beschreibung
Unleash the potential of your synchronous buck converters with the FDMS3620S, featuring two specialized N-Channel MOSFETs in a dual PQFN package. The internally connected switch node simplifies placement and routing, while the meticulously designed control MOSFET (Q1) and synchronousSyncFET (Q2) guarantee optimal power efficiency for maximum productivity
Hauptmerkmale
- Advanced driver architecture reduces switching losses
- High-side N-channel MOSFET for low-loss operation
- Low capacitance and high frequency operation
Anwendung
- Mouse
- Keyboard
- Monitor
Spezifikationen
Product Category | MOSFET | Technology | Si |
Mounting Style | SMD/SMT | Transistor Polarity | N-Channel |
Number of Channels | 2 Channel | Vds - Drain-Source Breakdown Voltage | 25 V |
Id - Continuous Drain Current | 38 A | Rds On - Drain-Source Resistance | 5.5 mOhms |
Vgs - Gate-Source Voltage | - 12 V, + 12 V | Vgs th - Gate-Source Threshold Voltage | 800 mV, 1.1 V |
Qg - Gate Charge | 26 nC, 106 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 2.5 W |
Channel Mode | Enhancement | Tradename | PowerTrench |
Series | FDMS3620S | Configuration | Dual |
Height | 1.1 mm | Length | 6 mm |
Product Type | MOSFET | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Transistor Type | 2 N-Channel |
Width | 5 mm | Unit Weight | 0.003175 oz |
Source Content uid | FDMS3620S | Pbfree Code | Yes |
Part Life Cycle Code | End Of Life | Reach Compliance Code | not_compliant |
ECCN Code | EAR99 | Case Connection | DRAIN SOURCE |
DS Breakdown Voltage-Min | 25 V | Drain Current-Max (Abs) (ID) | 49 A |
Drain Current-Max (ID) | 17.5 A | Drain-source On Resistance-Max | 0.0047 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | JESD-30 Code | R-PDSO-N6 |
JESD-609 Code | e3 | Moisture Sensitivity Level | 1 |
Number of Elements | 2 | Number of Terminals | 6 |
Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 2.5 W | Surface Mount | YES |
Terminal Finish | Tin (Sn) | Terminal Form | NO LEAD |
Terminal Position | DUAL | Time@Peak Reflow Temperature-Max (s) | 30 |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
Servicerichtlinien und andere
After-Sales- und Abwicklungsbezogen
Für alternative Zahlungskanäle kontaktieren Sie uns bitte unter:
[email protected]Versandart
AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..
365-Tage-Produkt
Qualitätsgarantie
Wir versprechen, 365 Tage Qualitätssicherung für alle unsere Produkte zu bieten.
In Stock: 7.072
Minimum Order: 1
Menge. | Einzelpreis | Ext. Preis |
---|---|---|
1+ | $2,520 | $2,52 |
200+ | $0,976 | $195,20 |
500+ | $0,942 | $471,00 |
1000+ | $0,925 | $925,00 |
Die unten angegebenen Preise dienen nur als Referenz.
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