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FDMS3660S +BOM

Asymmetric Dual N-Channel PowerTrench® Power Stage MOSFET 30V

Hersteller:

onsemi
Herstellerteil #:

FDMS3660S
Datenblatt:

FDMS3660S Datenblatt (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
Number Of Channels:

2 Channel
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an FDMS3660S

FDMS3660S Allgemeine Beschreibung

Meet the FDMS3660S, a cutting-edge device engineered to perfection. Boasting two specialized N-Channel MOSFETs housed in a dual PQFN package, this marvel of engineering revolutionizes the world of synchronous buck converters. Its internally connected switch node simplifies installation and routing, saving valuable time and effort during design implementation. Crafted with precision, the control MOSFET (Q1) and synchronousSyncFET (Q2) are finely tuned to deliver unparalleled power efficiency, setting new standards in performance and reliability. From consumer electronics to automotive systems, the FDMS3660S stands as a testament to innovation and excellence

Hauptmerkmale

Q1: N-Channel
Max r_DS(on) = 8 mΩ at V_GS = 10 V, I_D = 13 A
Max r_DS(on)= 11 mΩ at V_GS = 4.5 V, I_D = 11 A
Q2: N-Channel
Max r_DS(on) = 1.8 mΩ at V_GS = 10 V, I_D = 30 A
Max r_DS(on)= 2.2 mΩ at V_GS = 4.5 V, I_D = 27 A
Low inductance packaging shortens rise/fall times, resulting in lower switching losses
MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing
RoHS Compliant

Anwendung

Notebook PC

Spezifikationen

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	2 Channel	Vds - Drain-Source Breakdown Voltage	30 V
Id - Continuous Drain Current	13 A, 30 A	Rds On - Drain-Source Resistance	8 mOhms, 1.8 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V, - 12 V, + 12 V	Vgs th - Gate-Source Threshold Voltage	1.1 V
Qg - Gate Charge	29 nC, 87 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	2.2 W, 2.5 W
Channel Mode	Enhancement	Tradename	Power Stage PowerTrench
Series	FDMS3660S	Configuration	Dual
Height	1.1 mm	Length	6 mm
Product Type	MOSFET	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	2 N-Channel
Width	5 mm	Unit Weight	0.006032 oz
Source Content uid	FDMS3660S	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	34 Weeks
Case Connection	DRAIN SOURCE	DS Breakdown Voltage-Min	30 V
Drain Current-Max (Abs) (ID)	60 A	Drain Current-Max (ID)	13 A
Drain-source On Resistance-Max	0.008 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)	70 pF	JEDEC-95 Code	MO-240AA
JESD-30 Code	R-PDSO-F6	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	2
Number of Terminals	6	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	2.5 W
Surface Mount	YES	Terminal Finish	Matte Tin (Sn) - annealed
Terminal Form	FLAT	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON

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AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..