Bezahlverfahren
FDMS4435BZ +BOM
P-Channel PowerTrench® MOSFET -30V, -18A, 20mΩ
PQFN EP-
Hersteller:
-
Herstellerteil #:
FDMS4435BZ
-
Datenblatt:
-
Pbfree Code:
Yes
-
Part Life Cycle Code:
Active
-
Reach Compliance Code:
not_compliant
-
ECCN Code:
EAR99
-
EDA/CAD Modelle:
All bill of materials (BOM) can be sent via email to [email protected], or fill below form to Quote for FDMS4435BZ, guaranteed quotes back within 12hr.
Verfügbarkeit: 5156 Stck
Bitte füllen Sie das kurze Formular unten aus und wir werden Ihnen umgehend ein Angebot zukommen lassen..
FDMS4435BZ Allgemeine Beschreibung
The FDMS4435BZ is a high-performance P-Channel MOSFET designed for power management and load switching applications in notebook computers and portable battery packs. It utilizes an advanced Power Trench® process to minimize on-state resistance, ensuring efficient and reliable performance. Whether you need to control power flow or regulate voltage, this MOSFET is the ideal choice for demanding electronic devices that require optimal power management
Hauptmerkmale
- Rugged construction for harsh environments
- Smart sensor technology for real-time monitoring
- Advanced thermal management for efficient cooling
- Precision timing for reliable performance
Anwendung
- Headphones
- Keyboard
- Mouse
Spezifikationen
Source Content uid | FDMS4435BZ | Pbfree Code | Yes |
Part Life Cycle Code | Active | Reach Compliance Code | not_compliant |
ECCN Code | EAR99 | Factory Lead Time | 4 Weeks |
Additional Feature | ULTRA-LOW RESISTANCE | Avalanche Energy Rating (Eas) | 18 mJ |
Case Connection | DRAIN | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 30 V | Drain Current-Max (ID) | 9 A |
Drain-source On Resistance-Max | 0.02 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | MO-240AA | JESD-30 Code | R-PDSO-F5 |
JESD-609 Code | e3 | Moisture Sensitivity Level | 1 |
Number of Elements | 1 | Number of Terminals | 5 |
Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | P-CHANNEL |
Power Dissipation-Max (Abs) | 39 W | Pulsed Drain Current-Max (IDM) | 50 A |
Qualification Status | Not Qualified | Surface Mount | YES |
Terminal Finish | Matte Tin (Sn) - annealed | Terminal Form | FLAT |
Terminal Position | DUAL | Time@Peak Reflow Temperature-Max (s) | 30 |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
Servicerichtlinien und andere
After-Sales- und Abwicklungsbezogen
Für alternative Zahlungskanäle kontaktieren Sie uns bitte unter:
[email protected]Versandart
AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..
365-Tage-Produkt
Qualitätsgarantie
Wir versprechen, 365 Tage Qualitätssicherung für alle unsere Produkte zu bieten.
In Stock: 5.156
Minimum Order: 1
Menge. | Einzelpreis | Ext. Preis |
---|---|---|
1+ | - | - |
Die unten angegebenen Preise dienen nur als Referenz.