Diese Website verwendet Cookies. Durch die Nutzung dieser Website stimmen Sie der Verwendung von Cookies zu. Weitere Informationen finden Sie in unseren Datenschutzrichtlinie.

Die Bilder dienen nur als Referenz,

Siehe Technische Spezifikationen

FDMS7650 +BOM

N-Channel PowerTrench® MOSFET 30V, 267A, 0.99mΩ

Hersteller:

onsemi
Herstellerteil #:

FDMS7650
Datenblatt:

FDMS7650 Datenblatt (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an FDMS7650

FDMS7650 Allgemeine Beschreibung

Take your applications to the next level with the FDMS7650 N Channel MOSFET. With a continuous drain current of 60A and a drain source voltage of 30V, this transistor is built to handle heavy loads with ease. Its low on resistance of 0.0008ohm at a test voltage of 10V ensures minimal power loss and maximum efficiency. The FDMS7650 also features a threshold voltage of 1.9V, making it suitable for a wide range of operating conditions. With a power dissipation of 104W and an operating temperature range of -55°C to +150°C, this MOSFET is reliable even in harsh environments. Housed in a Power 56 case style, the FDMS7650 has 8 pins and is free from any SVHC

Hauptmerkmale

Highly efficient design for low power
Silicon and advanced package combine for best results
Rapid switching performance for high-speed applications
Robust MSL1 packaging for durability and reliability
100% tested for UL compliance
Safe and reliable operation in a wide range of temperatures

Anwendung

Suitable for multiple uses.
Adaptable to any need.
Dependable and efficient.

Spezifikationen

Source Content uid	FDMS7650	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	62 Weeks
Avalanche Energy Rating (Eas)	544 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	30 V
Drain Current-Max (ID)	36 A	Drain-source On Resistance-Max	0.99 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JESD-30 Code	R-PDSO-F5
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	5
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	104 W	Pulsed Drain Current-Max (IDM)	450 A
Qualification Status	Not Qualified	Surface Mount	YES
Terminal Finish	Matte Tin (Sn) - annealed	Terminal Form	FLAT
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING	Transistor Element Material	SILICON

Servicerichtlinien und andere

After-Sales- und Abwicklungsbezogen

Zahlung

Bezahlverfahren

TT/Überweisung

Paypal

Western Union

Geldgramm

Für alternative Zahlungskanäle kontaktieren Sie uns bitte unter:

[email protected]

Versand & Verpackung

Versandart

Fedex

UPS

DHL

NTN

Verpackung

AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..