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Siehe Technische Spezifikationen

FDMS8018 +BOM

The FDMS8018 MOSFET belongs to the POWER 56-8 package family and is optimized for high-performance power management solutions

Hersteller:

Fairchild Semiconductor
Herstellerteil #:

FDMS8018
Datenblatt:

FDMS8018 Datenblatt (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an FDMS8018

FDMS8018 Allgemeine Beschreibung

The FDMS8018 is a high-efficiency N-Channel MOSFET that is ideal for use in DC/DC converters. Its design has been carefully engineered to reduce switch node ringing, improve overall efficiency, and minimize power losses. With low gate charge and low on-resistance (r_DS(on)), this MOSFET offers fast switching speeds and excellent body diode reverse recovery performance, making it a top choice for both synchronous and conventional switching PWM controllers

Hauptmerkmale

High-reliability and high-efficiency power switching
Advanced silicon and package combination for low RDS(on)
Next-generation enhanced body diode technology for soft recovery
Robust MSL1 package design for harsh environments
100% UL tested and RoHS compliant for global use

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Source Content uid	FDMS8018	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	4 Weeks
Avalanche Energy Rating (Eas)	126 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	30 V
Drain Current-Max (ID)	30 A	Drain-source On Resistance-Max	0.0018 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	MO-240AA
JESD-30 Code	R-PDSO-F5	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	5	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	83 W
Pulsed Drain Current-Max (IDM)	180 A	Surface Mount	YES
Terminal Finish	MATTE TIN	Terminal Form	FLAT
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING	Transistor Element Material	SILICON

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