Bezahlverfahren
FDMS86202ET120 +BOM
N-Channel Shielded Gate PowerTrench® MOSFET 120V, 102A, 7.2mΩ
8-PowerTDFN-
Hersteller:
onsemi
-
Herstellerteil #:
FDMS86202ET120
-
Datenblatt:
-
Series:
PowerTrench®
-
FET Type:
N-Channel
-
Technology:
MOSFET (Metal Oxide)
-
Drain To Source Voltage (Vdss):
120 V
-
EDA/CAD Modelle:
All bill of materials (BOM) can be sent via email to [email protected], or fill below form to Quote for FDMS86202ET120, guaranteed quotes back within 12hr.
Verfügbarkeit: 9134 Stck
Bitte füllen Sie das kurze Formular unten aus und wir werden Ihnen umgehend ein Angebot zukommen lassen..
FDMS86202ET120 Allgemeine Beschreibung
This N-Channel MOSFET, part of the FDMS86202ET120 series, is a high-quality semiconductor device engineered using the state-of-the-art PowerTrench process. By integrating Shielded Gate technology, this MOSFET offers reduced on-state resistance while maintaining excellent switching performance. With a focus on optimization and reliability, this device is well-suited for demanding power applications
Hauptmerkmale
- Silicon-based MOSFET technology
- Robust package design ensures reliability
- Low on-resistance for efficient switching
- High-speed switching capability
- Compact and lightweight construction
Anwendung
- Durable and perfect for your needs.
- An essential product for any task.
Spezifikationen
Series | PowerTrench® | FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 120 V |
Current - Continuous Drain (Id) @ 25°C | 13.5A (Ta), 102A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Rds On (Max) @ Id, Vgs | 7.2mOhm @ 13.5A, 10V | Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 64 nC @ 10 V | Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 4585 pF @ 60 V | Power Dissipation (Max) | 3.3W (Ta), 187W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) | Mounting Type | Surface Mount |
Base Product Number | FDMS86202 |
Servicerichtlinien und andere
After-Sales- und Abwicklungsbezogen
Für alternative Zahlungskanäle kontaktieren Sie uns bitte unter:
[email protected]Versandart
AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..
365-Tage-Produkt
Qualitätsgarantie
Wir versprechen, 365 Tage Qualitätssicherung für alle unsere Produkte zu bieten.
In Stock: 9.134
Minimum Order: 1
Menge. | Einzelpreis | Ext. Preis |
---|---|---|
1+ | - | - |
Die unten angegebenen Preise dienen nur als Referenz.
Empfohlene Produkte
Top Sellers
-
2N2222
Stmicroelectronics
1000+ $0,587
-
BC547
Onsemi
NPN Epitaxial Silicon Transistor
-
ULN2003
Onsemi
Versatile device for driving heavy loads and motor
-
IRF3205
Infineon
TO-220AB Tube Power Transistor with N-Channel Silicon
-
TAN15
Microchip
The TAN is a robust NPN transistor designed for high-frequency applications, capable of operating at up to V and continuous curren