Bezahlverfahren
FDMS86300 +BOM
Sorted description of product FDMS86300: Trans MOSFET N-CH Si 80V 19A 8-Pin PQFN EP T/R
Power-56-8-
Hersteller:
Onsemi
-
Herstellerteil #:
FDMS86300
-
Datenblatt:
-
REACH:
Details
-
Technology:
Si
-
Mounting Style:
SMD/SMT
-
Transistor Polarity:
N-Channel
-
EDA/CAD Modelle:
All bill of materials (BOM) can be sent via email to [email protected], or fill below form to Quote for FDMS86300, guaranteed quotes back within 12hr.
Verfügbarkeit: 5002 Stck
Bitte füllen Sie das kurze Formular unten aus und wir werden Ihnen umgehend ein Angebot zukommen lassen..
FDMS86300 Allgemeine Beschreibung
Elevating performance to new heights, the FDMS86300 MOSFET stands out as a game-changer in the realm of power electronics. Boasting superior attributes such as minimal gate charge, ultra-low rDS(on), rapid switching speed, and unmatched body diode reverse recovery performance, this innovative component is poised to transform the efficiency and effectiveness of DC/DC converters across various industrial applications
Hauptmerkmale
- High-speed digital interface for fast data transfer
- Multi-bit architecture for enhanced processing capabilities
- Rapid thermal cycling for improved reliability
- Silicon dioxide passivation for surface protection
Anwendung
- Superior quality, low cost
- Efficient and reliable
- Compact design for easy installation
Spezifikationen
Product Category | MOSFET | REACH | Details |
Technology | Si | Mounting Style | SMD/SMT |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 80 V | Id - Continuous Drain Current | 42 A |
Rds On - Drain-Source Resistance | 5.5 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 3.4 V | Qg - Gate Charge | 59 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 104 W | Channel Mode | Enhancement |
Tradename | PowerTrench | Series | FDMS86300 |
Configuration | Single | Fall Time | 9 ns |
Forward Transconductance - Min | 60 S | Height | 1.1 mm |
Length | 6 mm | Product Type | MOSFET |
Rise Time | 26 ns | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 36 ns | Typical Turn-On Delay Time | 31 ns |
Width | 5 mm | Unit Weight | 0.002402 oz |
Servicerichtlinien und andere
After-Sales- und Abwicklungsbezogen
Für alternative Zahlungskanäle kontaktieren Sie uns bitte unter:
[email protected]Versandart
AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..
365-Tage-Produkt
Qualitätsgarantie
Wir versprechen, 365 Tage Qualitätssicherung für alle unsere Produkte zu bieten.
In Stock: 5.002
Minimum Order: 1
Menge. | Einzelpreis | Ext. Preis |
---|---|---|
1+ | - | - |
Die unten angegebenen Preise dienen nur als Referenz.
Empfohlene Produkte
Top Sellers
-
2N2222
Stmicroelectronics
1000+ $0,587
-
BC547
Onsemi
NPN Epitaxial Silicon Transistor
-
ULN2003
Onsemi
Versatile device for driving heavy loads and motor
-
IRF3205
Infineon
TO-220AB Tube Power Transistor with N-Channel Silicon
-
TAN15
Microchip
The TAN is a robust NPN transistor designed for high-frequency applications, capable of operating at up to V and continuous curren