Bezahlverfahren
FDMS86300DC +BOM
0V voltage rating with high current capacity
Power 56-
Hersteller:
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Herstellerteil #:
FDMS86300DC
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Datenblatt:
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Pbfree Code:
Yes
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Part Life Cycle Code:
Active
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Reach Compliance Code:
not_compliant
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ECCN Code:
EAR99
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EDA/CAD Modelle:
All bill of materials (BOM) can be sent via email to [email protected], or fill below form to Quote for FDMS86300DC, guaranteed quotes back within 12hr.
Verfügbarkeit: 5871 Stck
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FDMS86300DC Allgemeine Beschreibung
The FDMS86300DC sets a new standard for N-Channel MOSFETs with its innovative Power Trench technology and Dual Cool™ package. By leveraging these advancements, this MOSFET achieves unmatched performance levels with the lowest rDS(on) in its class. Its superior thermal resistance properties ensure that heat is efficiently managed, allowing for sustained high performance and reliability. Whether used in industrial, automotive, or consumer electronics applications, the FDMS86300DC delivers exceptional efficiency and functionality
Hauptmerkmale
- Advanced Power Packaging
- Pulse-Width Modulation Ready
- High-Speed Switching Capability
- Fully Compliant to Industry Standards
- Silicon-Based Semiconductor Excellence
- Optimized Thermal Performance Guaranteed
Anwendung
- Sleek and Modern Design
- Intelligent Power Management
- Safety Certification Approved
Spezifikationen
Source Content uid | FDMS86300DC | Pbfree Code | Yes |
Part Life Cycle Code | Active | Reach Compliance Code | not_compliant |
ECCN Code | EAR99 | Factory Lead Time | 65 Weeks |
Additional Feature | ULTRA LOW RESISTANCE | Avalanche Energy Rating (Eas) | 240 mJ |
Case Connection | DRAIN | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 80 V | Drain Current-Max (ID) | 24 A |
Drain-source On Resistance-Max | 0.0031 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | MO-240AA | JESD-30 Code | R-PDSO-F5 |
JESD-609 Code | e3 | Moisture Sensitivity Level | 1 |
Number of Elements | 1 | Number of Terminals | 5 |
Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 125 W | Pulsed Drain Current-Max (IDM) | 260 A |
Surface Mount | YES | Terminal Finish | Matte Tin (Sn) - annealed |
Terminal Form | FLAT | Terminal Position | DUAL |
Time@Peak Reflow Temperature-Max (s) | 30 | Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
Servicerichtlinien und andere
After-Sales- und Abwicklungsbezogen
Für alternative Zahlungskanäle kontaktieren Sie uns bitte unter:
[email protected]Versandart
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365-Tage-Produkt
Qualitätsgarantie
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In Stock: 5.871
Minimum Order: 1
Menge. | Einzelpreis | Ext. Preis |
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1+ | - | - |
Die unten angegebenen Preise dienen nur als Referenz.