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FDN306P +BOM

12V 2.6A 500mW 40mΩ@4.5V,2.6A 1.5V@250uA P Channel SOT-23 MOSFETs ROHS

FDN306P Allgemeine Beschreibung

The FDN306P stands out as a versatile and dependable component for a wide range of battery power management applications. Its advanced features, including low voltage operation and optimized PowerTrench process, make it a top contender in the field of power electronics. With a focus on efficiency, performance, and durability, this MOSFET delivers the power management solutions that modern applications demand

Hauptmerkmale

  • -2.6 A, -12 V
  • RDS(ON) = 40 mΩ @ VGS = -4.5 V
  • RDS(ON) = 50 mΩ @ VGS = -2.5 V
  • RDS(ON) = 80 mΩ @ VGS = -1.8 V
  • Fast switching speed
  • High performance trench technology for extremelylow RDS(ON)
  • SuperSOT™-3 provides low RDS(ON) and 30% higherpower handling capability than SOT23 in the samefootprint

Anwendung

  • This product is general usage and suitable for many different applications.
  • Battery Management
  • Load Switch
  • Battery Protection

Spezifikationen

Product Category MOSFET Technology Si
Mounting Style SMD/SMT Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 12 V
Id - Continuous Drain Current 2.6 A Rds On - Drain-Source Resistance 40 mOhms
Vgs - Gate-Source Voltage - 8 V, + 8 V Vgs th - Gate-Source Threshold Voltage 1.5 V
Qg - Gate Charge 17 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 500 mW
Channel Mode Enhancement Tradename PowerTrench
Series FDN306P Configuration Single
Fall Time 10 ns Forward Transconductance - Min 10 S
Height 1.12 mm Length 2.9 mm
Product MOSFET Small Signals Product Type MOSFET
Rise Time 10 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 P-Channel
Type MOSFET Typical Turn-Off Delay Time 38 ns
Typical Turn-On Delay Time 11 ns Width 1.4 mm
Part # Aliases FDN306P_NL Unit Weight 0.000371 oz

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