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FDN327N +BOM

High-power, high-speed N-channel MOSFET for switching applications

FDN327N Allgemeine Beschreibung

The FDN327N MOSFET transistor is a reliable and efficient component suitable for diverse electronic circuit designs. With its N-channel polarity, it can manage a continuous drain current (Id) of 2A and a drain-source voltage (Vds) of 20V. The on-resistance (Rds(on)) of 0.04ohm, along with a Rds(on) test voltage (Vgs) of 4.5V, provides low power dissipation and high efficiency. Moreover, its threshold voltage (Vgs) of 700mV enables accurate and controlled switching in electronic circuits

Hauptmerkmale

  • RDS(ON) = 40 mΩ @ VGS = 3.2 V
  • High reliability and robustness
  • Fast response time
  • Low distortion and noise
  • RDS(ON) = 35 mΩ @ VGS = 5.2 V
  • High immunity to radiation interference

Anwendung

  • Compact Design
  • Versatile Functionality

Spezifikationen

Product Category MOSFET Technology Si
Mounting Style SMD/SMT Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 20 V
Id - Continuous Drain Current 2 A Rds On - Drain-Source Resistance 40 mOhms
Vgs - Gate-Source Voltage - 8 V, + 8 V Vgs th - Gate-Source Threshold Voltage 400 mV
Qg - Gate Charge 6.3 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 500 mW
Channel Mode Enhancement Tradename PowerTrench
Series FDN327N Configuration Single
Fall Time 6.5 ns Forward Transconductance - Min 11 S
Height 1.12 mm Length 2.9 mm
Product MOSFET Small Signals Product Type MOSFET
Rise Time 6.5 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 N-Channel
Type MOSFET Typical Turn-Off Delay Time 14 ns
Typical Turn-On Delay Time 6 ns Width 1.4 mm
Part # Aliases FDN327N_NL Unit Weight 0.001058 oz

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