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High-power switching device for reliable performance
SOT-23-3Hersteller:
Fairchild Semiconductor
Herstellerteil #:
FDN339AN
Datenblatt:
Pbfree Code:
Yes
Part Life Cycle Code:
Active
Reach Compliance Code:
compliant
ECCN Code:
EAR99
EDA/CAD Modelle:
Senden Sie alle Stücklisten an
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The FDN339AN product is a high-performance N-Channel MOSFET designed for maximum efficiency and superior switching performance. It features a low on-state resistance and low gate charge, making it an ideal choice for various applications where precision and reliability are paramount. With a 2.5V specified voltage, this MOSFET is perfect for use in modern electronic devices that demand high levels of performance and energy efficiency
Source Content uid | FDN339AN | Pbfree Code | Yes |
Part Life Cycle Code | Active | Reach Compliance Code | compliant |
ECCN Code | EAR99 | Factory Lead Time | 71 Weeks |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 20 V |
Drain Current-Max (ID) | 3 A | Drain-source On Resistance-Max | 0.035 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | JESD-30 Code | R-PDSO-G3 |
JESD-609 Code | e3 | Moisture Sensitivity Level | 1 |
Number of Elements | 1 | Number of Terminals | 3 |
Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 0.5 W | Qualification Status | Not Qualified |
Surface Mount | YES | Terminal Finish | Matte Tin (Sn) - annealed |
Terminal Form | GULL WING | Terminal Position | DUAL |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
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Menge. | Einzelpreis | Ext. Preis |
---|---|---|
5+ | $0,089 | $0,44 |
50+ | $0,073 | $3,65 |
150+ | $0,064 | $9,60 |
500+ | $0,057 | $28,50 |
3000+ | $0,049 | $147,00 |
6000+ | $0,047 | $282,00 |
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