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FDN357N +BOM

30V 1.9A 500mW 60mΩ@10V,2.2A 2V@250uA N Channel SOT-23 MOSFETs ROHS

FDN357N Allgemeine Beschreibung

Operating within a temperature range of -55 to 150 °C, the FDN357N MOSFET is a reliable choice for electronic circuits that require precise temperature control. Its N-channel polarity and logic level drive make it compatible with a wide range of digital devices, while the SOT-23 housing type offers a compact and easily mountable form factor. The enhancement mode of this MOSFET allows for efficient power handling, with a power dissipation rating of 500 mW ensuring stable performance under varying load conditions

Hauptmerkmale

  • 1.9 A, 30 V
  • RDS(ON) = 0.090 Ω @ VGS = 4.5 V
  • RDS(ON) = 0.060 Ω @ VGS = 10 V
  • Industry standard outline SOT-23 surface mount package using proprietary SuperSOT™-3 design for superior thermal and electrical capabilities.
  • High density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

Anwendung

  • This product is general usage and suitable for many different applications.
  • Battery Powered Circuits

Spezifikationen

Product Category MOSFET Technology Si
Mounting Style SMD/SMT Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 1.9 A Rds On - Drain-Source Resistance 81 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 1 V
Qg - Gate Charge 5.9 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 500 mW
Channel Mode Enhancement Series FDN357N
Configuration Single Fall Time 12 ns
Forward Transconductance - Min 5 S Height 1.12 mm
Length 2.9 mm Product MOSFET Small Signals
Product Type MOSFET Rise Time 12 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 12 ns
Typical Turn-On Delay Time 5 ns Width 1.4 mm
Part # Aliases FDN357N_NL Unit Weight 0.001058 oz

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