Diese Website verwendet Cookies. Durch die Nutzung dieser Website stimmen Sie der Verwendung von Cookies zu. Weitere Informationen finden Sie in unseren Datenschutzrichtlinie.

Die Bilder dienen nur als Referenz,

Siehe Technische Spezifikationen

FDN360P +BOM

FDN360P is a PowerTrench MOSFET with a P-Channel design, packaged in a 3000-REEL format

Hersteller:

Onsemi
Herstellerteil #:

FDN360P
Datenblatt:

FDN360P Datenblatt (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

P-Channel
Number Of Channels:

1 Channel
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an FDN360P

FDN360P Allgemeine Beschreibung

The FDN360P MOSFET sets a new standard in power efficiency and switching performance with its innovative design and advanced manufacturing process. Created by Fairchild Semiconductor, these P-Channel Logic Level MOSFETs are perfect for applications requiring low voltage and battery power. By minimizing on-state resistance and optimizing gate charge, the FDN360P offers exceptional efficiency and speed, making it an ideal choice for a variety of electronic devices

Hauptmerkmale

-2 A, -30 V
R_DS(on) = 80 mΩ @ V_GS = -10 V
R_DS(on) = 125 mΩ @ V_GS = -4.5 V
Low Gate Charge (6.2nC typical)
High Performance Trench Technology for Extremely Low r_DS(on)
High Power Version of Industry Standard SOT-23 Package. Identical Pin-Out to SOT-23 with 30% Higher Power Handling Capability

Anwendung

Consumer Electronics
Energy Efficient Designs
Medical Devices

Spezifikationen

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	P-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	30 V
Id - Continuous Drain Current	2 A	Rds On - Drain-Source Resistance	63 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	3 V
Qg - Gate Charge	9 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	500 mW
Channel Mode	Enhancement	Tradename	PowerTrench
Series	FDN360P	Configuration	Single
Fall Time	13 ns	Forward Transconductance - Min	5 S
Height	1.12 mm	Length	2.9 mm
Product	MOSFET Small Signals	Product Type	MOSFET
Rise Time	13 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	1 P-Channel
Type	MOSFET	Typical Turn-Off Delay Time	11 ns
Typical Turn-On Delay Time	6 ns	Width	1.4 mm
Part # Aliases	FDN360P_NL	Unit Weight	0.001058 oz

Servicerichtlinien und andere

After-Sales- und Abwicklungsbezogen

Zahlung

Bezahlverfahren

TT/Überweisung

Paypal

Western Union

Geldgramm

Für alternative Zahlungskanäle kontaktieren Sie uns bitte unter:

[email protected]

Versand & Verpackung

Versandart

Fedex

UPS

DHL

NTN

Verpackung

AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..