Diese Website verwendet Cookies. Durch die Nutzung dieser Website stimmen Sie der Verwendung von Cookies zu. Weitere Informationen finden Sie in unseren Datenschutzrichtlinie.

Die Bilder dienen nur als Referenz,

Siehe Technische Spezifikationen

FDN5630 +BOM

60V 1.7A 100mΩ@1.7A,10V 500mW 3V@250uA null SOT-23-3 MOSFETs ROHS

Hersteller:

Onsemi
Herstellerteil #:

FDN5630
Datenblatt:

FDN5630 Datenblatt (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an FDN5630

FDN5630 Allgemeine Beschreibung

Designed for maximum efficiency, the FDN5630 N-Channel MOSFET is a game-changer in the realm of DC/DC converters. Featuring a small SOT23 footprint and ultra-low RDS(ON), this MOSFET is tailored to excel in both synchronous and conventional switching PWM controllers. ON Semiconductor's PowerTrench technology sets the FDN5630 apart, offering faster switching speeds and improved efficiency compared to its counterparts. With the FDN5630 onboard, designers can unlock higher performance levels and streamline board layout without compromising on energy savings in power management applications

Hauptmerkmale

1.7 A, 60 V
R_DS(ON) = 0.100 Ω @ V_GS = 10 V
R_DS(ON) = 0.120 Ω @ V_GS = 6 V
Optimized for use in high frequency DC/DC converters.
Low gate charge.
Very fast switching.
SuperSOT™ - 3 Provides Low r_DS(ON) in SOT23 Footprint

Anwendung

This product is general usage and suitable for many different applications.
DC/DC Converter
Motor Drives

Spezifikationen

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	60 V
Id - Continuous Drain Current	1.7 A	Rds On - Drain-Source Resistance	73 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	1 V
Qg - Gate Charge	10 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	500 mW
Channel Mode	Enhancement	Tradename	PowerTrench
Series	FDN5630	Configuration	Single
Fall Time	6 ns	Forward Transconductance - Min	6 S
Height	1.12 mm	Length	2.9 mm
Product	MOSFET Small Signals	Product Type	MOSFET
Rise Time	6 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Type	MOSFET	Typical Turn-Off Delay Time	15 ns
Typical Turn-On Delay Time	10 ns	Width	1.4 mm
Part # Aliases	FDN5630_NL	Unit Weight	0.001058 oz

Servicerichtlinien und andere

After-Sales- und Abwicklungsbezogen

Zahlung

Bezahlverfahren

TT/Überweisung

Paypal

Western Union

Geldgramm

Für alternative Zahlungskanäle kontaktieren Sie uns bitte unter:

[email protected]

Versand & Verpackung

Versandart

Fedex

UPS

DHL

NTN

Verpackung

AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..