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FDPF5N50UT +BOM

MOSFET 500V: Introducing FDPF5N50UT, a state-of-the-art FRFET MOSFET tailored for high-power electronic systems

Hersteller:

Onsemi
Herstellerteil #:

FDPF5N50UT
Datenblatt:

FDPF5N50UT Datenblatt (PDF)
REACH:

Details
Technology:

Si
Mounting Style:

Through Hole
Transistor Polarity:

N-Channel
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an FDPF5N50UT

FDPF5N50UT Allgemeine Beschreibung

The FDPF5N50UT is a member of the UniFET MOSFET family, known for its high voltage capabilities and advanced technology. This MOSFET is specifically designed to minimize on-state resistance while enhancing switching performance and increasing avalanche energy strength. With the UniFET Ultra FRFET technology, this MOSFET boasts a significantly improved body diode reverse recovery performance, with a t_rr of less than 50nsec and a reverse dv/dt immunity of 20V/nsec, far surpassing traditional planar MOSFETs on the market. By utilizing this innovative technology, the UniFET Ultra FRFET MOSFET eliminates the need for additional components, thereby enhancing system reliability in applications that demand superior MOSFET body diode performance

Hauptmerkmale

Safe operating area exceeding 400V
Rise time less than 50ns
Low ESR and high current rating
Excellent radiation resistance
Avalanche tested for reliability
Fast fall time ensuring safe switching

Anwendung

Cost-effective solution
Suitable for commercial use
Stable power output

Spezifikationen

Product Category	MOSFET	REACH	Details
Technology	Si	Mounting Style	Through Hole
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	500 V	Id - Continuous Drain Current	4 A
Rds On - Drain-Source Resistance	1.65 Ohms	Vgs - Gate-Source Voltage	- 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage	5 V	Qg - Gate Charge	11 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	28 W	Channel Mode	Enhancement
Tradename	UniFET FRFET	Series	FDPF5N50UT
Configuration	Single	Fall Time	20 ns
Forward Transconductance - Min	4.8 S	Height	16.07 mm
Length	10.36 mm	Product Type	MOSFET
Rise Time	21 ns	Factory Pack Quantity	1000
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	27 ns	Typical Turn-On Delay Time	14 ns
Width	4.9 mm	Unit Weight	0.068784 oz

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AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..