Bezahlverfahren
![hsbc](/img/service-policies-hsbc.png)
![paypal](/img/service-policies-paypal.png)
![wu](/img/service-policies-wu.png)
![mg](/img/service-policies-mg.png)
Consider using the FDS4435BZ for power management applications requiring a P-channel MOSFET with a 30V maximum voltage rating and 8
SOIC-8Hersteller:
Onsemi
Herstellerteil #:
FDS4435BZ
Datenblatt:
Technology:
Si
Mounting Style:
SMD/SMT
Transistor Polarity:
P-Channel
Number Of Channels:
1 Channel
EDA/CAD Modelle:
Senden Sie alle Stücklisten an
[email protected],
oder füllen Sie das untenstehende Formular aus, um ein Angebot für FDS4435BZ zu erhalten. Garantierte Antwort innerhalb
12hr.
Bitte füllen Sie das kurze Formular unten aus und wir werden Ihnen umgehend ein Angebot zukommen lassen..
Designed to meet the rigorous demands of the electronics industry, the FDS4435BZ P-Channel MOSFET boasts a superior PowerTrench® process that sets it apart from traditional counterparts. Its optimized on-state resistance ensures superior performance in Power Management and load switching applications commonly encountered in Notebook Computers and Portable Battery Packs. This MOSFET is engineered for reliability and efficiency, making it a preferred choice for engineers and designers looking to enhance the performance of their electronic devices
Product Category | MOSFET | Technology | Si |
Mounting Style | SMD/SMT | Transistor Polarity | P-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 30 V |
Id - Continuous Drain Current | 8.8 A | Rds On - Drain-Source Resistance | 16 mOhms |
Vgs - Gate-Source Voltage | - 25 V, + 25 V | Vgs th - Gate-Source Threshold Voltage | 3 V |
Qg - Gate Charge | 40 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 2.5 W |
Channel Mode | Enhancement | Tradename | PowerTrench |
Series | FDS4435BZ | Configuration | Single |
Fall Time | 38 ns | Forward Transconductance - Min | 24 S |
Height | 1.75 mm | Length | 4.9 mm |
Product Type | MOSFET | Rise Time | 13 ns |
Factory Pack Quantity | 2500 | Subcategory | MOSFETs |
Transistor Type | 1 P-Channel | Type | MOSFET |
Typical Turn-Off Delay Time | 68 ns | Typical Turn-On Delay Time | 12 ns |
Width | 3.9 mm | Part # Aliases | FDS4435BZ_NL |
Unit Weight | 0.004586 oz |
After-Sales- und Abwicklungsbezogen
Bezahlverfahren
Für alternative Zahlungskanäle kontaktieren Sie uns bitte unter:
[email protected]Versandart
AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..
365-Tage-Produkt
Qualitätsgarantie
Wir versprechen, 365 Tage Qualitätssicherung für alle unsere Produkte zu bieten.
Menge. | Einzelpreis | Ext. Preis |
---|---|---|
5+ | $0,188 | $0,94 |
50+ | $0,157 | $7,85 |
150+ | $0,144 | $21,60 |
500+ | $0,127 | $63,50 |
3000+ | $0,090 | $270,00 |
6000+ | $0,086 | $516,00 |
Die unten angegebenen Preise dienen nur als Referenz.
2N2222
Stmicroelectronics
1000+ $0,587
BC547
Onsemi
NPN Epitaxial Silicon Transistor
ULN2003
Onsemi
Versatile device for driving heavy loads and motor
IRF3205
Infineon
TO-220AB Tube Power Transistor with N-Channel Silicon
TAN15
Microchip
The TAN is a robust NPN transistor designed for high-frequency applications, capable of operating at up to V and continuous curren