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FDS4435BZ +BOM

Consider using the FDS4435BZ for power management applications requiring a P-channel MOSFET with a 30V maximum voltage rating and 8

FDS4435BZ Allgemeine Beschreibung

Designed to meet the rigorous demands of the electronics industry, the FDS4435BZ P-Channel MOSFET boasts a superior PowerTrench® process that sets it apart from traditional counterparts. Its optimized on-state resistance ensures superior performance in Power Management and load switching applications commonly encountered in Notebook Computers and Portable Battery Packs. This MOSFET is engineered for reliability and efficiency, making it a preferred choice for engineers and designers looking to enhance the performance of their electronic devices

Hauptmerkmale

  • High power factor correction (PFC) efficiency
  • Low harmonic distortion for clean output
  • Built-in overvoltage shutdown protection

Anwendung

  • Great for many different tasks.
  • Flexible and adaptable.
  • Can be used in various scenarios.

Spezifikationen

Product Category MOSFET Technology Si
Mounting Style SMD/SMT Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 8.8 A Rds On - Drain-Source Resistance 16 mOhms
Vgs - Gate-Source Voltage - 25 V, + 25 V Vgs th - Gate-Source Threshold Voltage 3 V
Qg - Gate Charge 40 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 2.5 W
Channel Mode Enhancement Tradename PowerTrench
Series FDS4435BZ Configuration Single
Fall Time 38 ns Forward Transconductance - Min 24 S
Height 1.75 mm Length 4.9 mm
Product Type MOSFET Rise Time 13 ns
Factory Pack Quantity 2500 Subcategory MOSFETs
Transistor Type 1 P-Channel Type MOSFET
Typical Turn-Off Delay Time 68 ns Typical Turn-On Delay Time 12 ns
Width 3.9 mm Part # Aliases FDS4435BZ_NL
Unit Weight 0.004586 oz

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