Bezahlverfahren
FDS4685 +BOM
40V P-Channel PowerTrench® MOSFET -8.2A, 27mΩ
8-SOIC-
Hersteller:
-
Herstellerteil #:
FDS4685
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Datenblatt:
-
Pbfree Code:
Yes
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Part Life Cycle Code:
Active
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Reach Compliance Code:
compliant
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ECCN Code:
EAR99
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EDA/CAD Modelle:
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Verfügbarkeit: 6281 Stck
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FDS4685 Allgemeine Beschreibung
The FDS4685 is a high-performance P-Channel MOSFET designed for power management applications that demand a wide range of gate drive voltage ratings. Built using the advanced PowerTrench process, this rugged gate version offers exceptional durability and reliability, making it ideal for a variety of power management tasks. With a gate drive voltage range of 4.5V to 20V, the FDS4685 provides versatility and flexibility, enabling it to be used in a wide range of systems and configurations. Whether it's for industrial, automotive, or consumer electronics applications, this MOSFET is well-equipped to handle the demands of power management with ease and efficiency
Hauptmerkmale
- -3.9A, -15V
- RDS(ON) = 0.025 mΩ @ VGS = -4.5V
- Fast switching time
- Low RDS(ON)
- Suitable for high-power applications
- Fully CE compliant
Anwendung
- Versatile functionality
- Advanced technology
- High level of protection
Spezifikationen
Source Content uid | FDS4685 | Pbfree Code | Yes |
Part Life Cycle Code | Active | Reach Compliance Code | compliant |
ECCN Code | EAR99 | Factory Lead Time | 56 Weeks |
Application | SWITCHING | Configuration | SINGLE WITH BUILT-IN DIODE |
FET Technology | METAL-OXIDE SEMICONDUCTOR | JESD-30 Code | R-PDSO-G8 |
Moisture Sensitivity Level | 1 | Number of Elements | 1 |
Number of Terminals | 8 | Operating Mode | ENHANCEMENT MODE |
Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | P-CHANNEL |
Surface Mount | YES | Terminal Finish | MATTE TIN |
Terminal Form | GULL WING | Terminal Position | DUAL |
Time@Peak Reflow Temperature-Max (s) | 30 | Transistor Element Material | SILICON |
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In Stock: 6.281
Minimum Order: 1
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1+ | - | - |
Die unten angegebenen Preise dienen nur als Referenz.