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Siehe Technische Spezifikationen

FDS6675 +BOM

Single P-Channel Logic Level PowerTrench™ MOSFET -30V, -11A, 14mΩ

Hersteller:

onsemi
Herstellerteil #:

FDS6675
Datenblatt:

FDS6675 Datenblatt (PDF)
FET Type:

P-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

30 V
Current - Continuous Drain (Id) @ 25°C:

11A (Ta)
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an FDS6675

FDS6675 Allgemeine Beschreibung

This P-Channel Logic Level MOSFET is produced using an advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for notebook computer applications: load switching and power management, battery charging circuits, and DC/DC conversion.

Hauptmerkmale

-11 A, -30 V
R_DS(ON) = 0.014 W @ V_GS = -10 V
R_DS(ON) = 0.020 W @ V_GS = -4.5 V.
Low gate charge (30nC typical).
High performance trench technology for extremely low R_DS(ON).
High power and current handling capability.

Anwendung

This product is general usage and suitable for many different applications.

Spezifikationen

FET Type	P-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V	Current - Continuous Drain (Id) @ 25°C	11A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V	Rds On (Max) @ Id, Vgs	14mOhm @ 11A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	42 nC @ 5 V
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	3000 pF @ 15 V
FET Feature	-	Power Dissipation (Max)	2.5W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Product Category	MOSFET	Mounting Style	SMD/SMT
Transistor Polarity	P-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	30 V	Id - Continuous Drain Current	11 A
Rds On - Drain-Source Resistance	14 mOhms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	3 V	Qg - Gate Charge	30 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	2.5 W	Channel Mode	Enhancement
Tradename	PowerTrench	Series	FDS6675
Configuration	Single	Fall Time	100 ns
Forward Transconductance - Min	32 S	Height	1.75 mm
Length	4.9 mm	Product Type	MOSFET
Rise Time	16 ns	Factory Pack Quantity	2500
Subcategory	MOSFETs	Transistor Type	1 P-Channel
Type	MOSFET	Typical Turn-Off Delay Time	50 ns
Typical Turn-On Delay Time	12 ns	Width	3.9 mm
Part # Aliases	FDS6675_NL	Unit Weight	0.004586 oz

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Verpackung

AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..

Garantie

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Bewertungen und Rezensionen

Mehr

J**n 04.26.2021

Sent people not familiar to me good people sympathetic called me and i went and took the package

D**n 02.20.2021

I ordered yellow and green. Green is very bright, yellow is less bright. The seller is well done.

K**y 05.03.2020

Bravo, Avaq! The D70F3423 electronic components are outstanding. They work seamlessly, and the level of attention to detail is evident. Highly recommend for their exceptional products.

A**l 04.28.2020

In fact, not yet checked, but packed in an antistatic bag. The quality is excellent in soldering places all clean