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FDS6679AZ +BOM

P-Channel PowerTrench® MOSFET -30V, -13A, 9mΩ

FDS6679AZ Röntgeninspektion

X-Ray inspection ensures product integrity by detecting internal defects without damaging external packaging. It reduces failure rates and enhances production efficiency, making it indispensable in the electronics components industry.

FDS6679AZ

FDS6679AZ Allgemeine Beschreibung

Meet the FDS6679AZ P-Channel MOSFET, a true powerhouse in the world of semiconductor technology. With its innovative PowerTrench process, this device sets the standard for on-state resistance reduction, making it a top choice for Power Management and load switching tasks. Perfectly suited for Notebook Computers and Portable Battery Packs, this MOSFET is tailor-made for applications that require precision and efficiency. Trust in the FDS6679AZ to deliver unparalleled performance and reliability, ensuring that your electronics operate at their peak potential

Hauptmerkmale

  • Low noise and distortion
  • Fast switching time
  • High reliability and yield

Anwendung

  • Compact and efficient product.
  • Trustworthy for various tasks.
  • Highly recommended option.

Spezifikationen

Product Category MOSFET Technology Si
Mounting Style SMD/SMT Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 13 A Rds On - Drain-Source Resistance 9.3 mOhms
Vgs - Gate-Source Voltage - 25 V, + 25 V Vgs th - Gate-Source Threshold Voltage 3 V
Qg - Gate Charge 96 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 2.5 W
Channel Mode Enhancement Tradename PowerTrench
Series FDS6679AZ Configuration Single
Fall Time 92 ns Height 1.75 mm
Length 4.9 mm Product Type MOSFET
Rise Time 15 ns Factory Pack Quantity 2500
Subcategory MOSFETs Transistor Type 1 P-Channel
Typical Turn-Off Delay Time 210 ns Typical Turn-On Delay Time 13 ns
Width 3.9 mm Unit Weight 0.004586 oz

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