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FDS6910 +BOM

Silicon-based MOSFET offering low Rds-on and high current handling capabilities

FDS6910 Allgemeine Beschreibung

The FDS6910 MOSFET sets the standard for excellence in N-Channel Logic Level MOSFETs. Its advanced design, incorporating the PowerTrench® process, guarantees minimal on-state resistance and unmatched switching performance. Whether you're working on a low voltage or battery powered application, the FDS6910 is the ideal choice, providing low power loss and rapid switching capabilities. For projects that demand the best, the FDS6910 delivers unparalleled quality and performance

Hauptmerkmale

  • Fast switching speed and low noise
  • High power handling and current capability
  • Trench technology for low RDS(ON) and high performance
  • Safe operating area for reliable operation
  • Low gate charge and high surge capability
  • Compact design with high density packaging

Anwendung

  • Perfect for all your needs.

Spezifikationen

Product Category MOSFET Technology Si
Mounting Style SMD/SMT Transistor Polarity N-Channel
Number of Channels 2 Channel Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 7.5 A Rds On - Drain-Source Resistance 10.6 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 1 V
Qg - Gate Charge 24 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 1.6 W
Channel Mode Enhancement Tradename PowerTrench
Series FDS6910 Configuration Dual
Fall Time 5 ns Forward Transconductance - Min 36 S
Height 1.75 mm Length 4.9 mm
Product MOSFET Small Signal Product Type MOSFET
Rise Time 5 ns Factory Pack Quantity 2500
Subcategory MOSFETs Transistor Type 2 N-Channel
Type MOSFET Typical Turn-Off Delay Time 26 ns
Typical Turn-On Delay Time 9 ns Width 3.9 mm
Part # Aliases FDS6910_NL Unit Weight 0.006596 oz

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