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FDS8958A +BOM

Transistor MOSFET with N and P-Channel types, rated for 30V and currents of 7A and 5A, in an 8-pin SOIC package on tape and reel

FDS8958A Allgemeine Beschreibung

With a focus on reducing power loss and enhancing overall efficiency, the FDS8958A is a standout choice for a wide range of electronic applications. Whether used in low voltage systems or battery-powered devices, these transistors excel at minimizing energy consumption while ensuring seamless operation. Thanks to their advanced PowerTrench design, the FDS8958A delivers unparalleled performance, making it a reliable option for demanding projects

Hauptmerkmale

  • Safe Operating Area: -1.5A, +1.8V
  • Gate to Source Voltage: +/-6V
  • Maximum Junction Temperature: 150°C
  • Frequency Response: Up to 100 kHz
  • Voltage Transient Immunity: ±1kV/us
  • Datasheet Available: Yes, contact us

Anwendung

  • Great for all your needs!
  • Perfect for any task.
  • Useful in many situations.

Spezifikationen

Product Category MOSFET Technology Si
Mounting Style SMD/SMT Transistor Polarity N-Channel, P-Channel
Number of Channels 2 Channel Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 7 A, 5 A Rds On - Drain-Source Resistance 28 mOhms, 52 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 1 V, 3 V
Qg - Gate Charge 16 nC, 13 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 2 W
Channel Mode Enhancement Series FDS8958A
Configuration Dual Fall Time 3 ns, 9 ns
Forward Transconductance - Min 25 S, 10 S Height 1.75 mm
Length 4.9 mm Product Type MOSFET
Rise Time 5 ns, 13 ns Factory Pack Quantity 2500
Subcategory MOSFETs Transistor Type 1 N-Channel, 1 P-Channel
Type MOSFET Typical Turn-Off Delay Time 23 ns, 14 ns
Typical Turn-On Delay Time 8 ns, 7 ns Width 3.9 mm
Part # Aliases FDS8958A_NL Unit Weight 0.006596 oz

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