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FDS9958 +BOM

Dual P-Channel MOSFET Array Transistor 60V 2.9A 8-Pin SOIC T/R

FDS9958 Allgemeine Beschreibung

The FDS9958 MOSFETs are crafted using a cutting-edge PowerTrench® process that is designed to reduce on-state resistance while keeping gate charge low for optimal switching capabilities. These components excel in portable electronics applications such as load switching, power management, battery charging, and protection circuits. With their superior performance and efficiency, the FDS9958 MOSFETs are the ideal choice for engineers looking to enhance the functionality of their devices

Hauptmerkmale

  • Max rDON = 80 mΩ at VGSOFF = -12 V, ID = -3.1 A
  • Min rRSET = 120 mΩ at VGRESET = 10 V, IR = 2.2 A
  • Max TJUNCTION = -40°C to 150°C at humidity <= 60%
  • RoHS compliant for lead-free soldering
  • UL recognized component for safety and reliability
  • ESD protection circuitry with VZAP ≥ 2 kV

Anwendung

  • Multiple functions available
  • Convenient power control

Spezifikationen

Product Category MOSFET Technology Si
Mounting Style SMD/SMT Transistor Polarity P-Channel
Number of Channels 2 Channel Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 2.9 A Rds On - Drain-Source Resistance 105 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 3 V
Qg - Gate Charge 23 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 2 W
Channel Mode Enhancement Tradename PowerTrench
Series FDS9958 Configuration Dual
Fall Time 6 ns Height 1.75 mm
Length 4.9 mm Product Type MOSFET
Rise Time 3 ns Factory Pack Quantity 2500
Subcategory MOSFETs Transistor Type 2 P-Channel
Typical Turn-Off Delay Time 27 ns Typical Turn-On Delay Time 6 ns
Width 3.9 mm Unit Weight 0.006596 oz

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