Bezahlverfahren
FDT3612 +BOM
100V N-Channel PowerTrench® MOSFET 3.7A, 120mΩ
SOT-223-
Hersteller:
Fairchild Semiconductor
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Herstellerteil #:
FDT3612
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Datenblatt:
-
Pbfree Code:
Yes
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Part Life Cycle Code:
Active
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Reach Compliance Code:
not_compliant
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ECCN Code:
EAR99
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EDA/CAD Modelle:
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Verfügbarkeit: 4413 Stck
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FDT3612 Allgemeine Beschreibung
Elevate your power supply designs with FDT3612, a versatile N-Channel MOSFET engineered to deliver superior efficiency and performance. With faster switching speeds and lower gate charge, this MOSFET enables easier and safer drive operation, even at high frequencies. By enhancing the efficiency of DC/DC converters, FDT3612 ensures optimal power delivery and thermal performance in various applications. Upgrade your power electronics systems with FDT3612 and experience the benefits of a reliable and efficient MOSFET solution
Hauptmerkmale
- 3.7 A, 100 V
- RDS(on) = 120 mΩ@ VGS = 10 V
- RDS(on) = 130 mΩ @ VGS = 6 V
- Fast switching speed
- Low gate charge (14nC typical)
- High performance trench technology for extremely low RDS(ON)
- High power and current handling capability in awidely used surface mount package
Anwendung
- This product is general usage and suitable for many different applications.
- DC/DC Converters
- Motor Drives
Spezifikationen
Source Content uid | FDT3612 | Pbfree Code | Yes |
Part Life Cycle Code | Active | Reach Compliance Code | not_compliant |
ECCN Code | EAR99 | Factory Lead Time | 70 Weeks |
Avalanche Energy Rating (Eas) | 90 mJ | Case Connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 100 V |
Drain Current-Max (ID) | 3.7 A | Drain-source On Resistance-Max | 0.12 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | JESD-30 Code | R-PDSO-G4 |
JESD-609 Code | e3 | Moisture Sensitivity Level | 1 |
Number of Elements | 1 | Number of Terminals | 4 |
Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 1.1 W | Pulsed Drain Current-Max (IDM) | 20 A |
Qualification Status | Not Qualified | Surface Mount | YES |
Terminal Finish | Matte Tin (Sn) - annealed | Terminal Form | GULL WING |
Terminal Position | DUAL | Time@Peak Reflow Temperature-Max (s) | 30 |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
Servicerichtlinien und andere
After-Sales- und Abwicklungsbezogen
Für alternative Zahlungskanäle kontaktieren Sie uns bitte unter:
[email protected]Versandart
AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..
365-Tage-Produkt
Qualitätsgarantie
Wir versprechen, 365 Tage Qualitätssicherung für alle unsere Produkte zu bieten.
In Stock: 4.413
Minimum Order: 1
Menge. | Einzelpreis | Ext. Preis |
---|---|---|
5+ | $0,249 | $1,24 |
50+ | $0,200 | $10,00 |
150+ | $0,179 | $26,85 |
1000+ | $0,153 | $153,00 |
2000+ | $0,142 | $284,00 |
5000+ | $0,135 | $675,00 |
Die unten angegebenen Preise dienen nur als Referenz.
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