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Siehe Technische Spezifikationen

FQA11N90 +BOM

TO-247VAR N-Channel MOSFET Transistor

Hersteller:

Onsemi
Herstellerteil #:

FQA11N90
Datenblatt:

FQA11N90 Datenblatt (PDF)
Technology:

Si
Mounting Style:

Through Hole
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an FQA11N90

FQA11N90 Allgemeine Beschreibung

The FQA11N90 Power MOSFET is a cutting-edge semiconductor device designed to meet the demands of high-power applications. With a voltage rating of 900V and a continuous drain current of 11A, this MOSFET is capable of handling heavy loads with ease. Its low on-resistance of 0.66 ohms ensures efficient power handling and minimal power losses, making it an ideal choice for power supplies, motor control, and inverters. The advanced technology and rugged design of the FQA11N90 ensure high reliability and performance, making it suitable for demanding industrial applications. Housed in a TO-3P package, this transistor offers excellent thermal properties and easy mounting on a heat sink, further enhancing its capabilities in high-power situations. Moreover, the FQA11N90 features low gate charge, gate threshold voltage, and fast switching speed, making it easy to drive and control while maintaining high efficiency and performance in high-frequency applications

Hauptmerkmale

Pulse width modulation supported
Low on-resistance realized
Silicon carbide construction
Fully isolated gate driver
Robust electrostatic discharge

Anwendung

Control systems
Light fixtures
Renewable tech

Spezifikationen

Product Category	MOSFET	Technology	Si
Mounting Style	Through Hole	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	900 V
Id - Continuous Drain Current	11.4 A	Rds On - Drain-Source Resistance	960 mOhms
Vgs - Gate-Source Voltage	- 30 V, + 30 V	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	300 W
Channel Mode	Enhancement	Configuration	Single
Fall Time	90 ns	Forward Transconductance - Min	12 S
Height	20.1 mm	Length	16.2 mm
Product Type	MOSFET	Rise Time	135 ns
Factory Pack Quantity	450	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Type	MOSFET
Typical Turn-Off Delay Time	165 ns	Typical Turn-On Delay Time	65 ns
Width	5 mm	Part # Aliases	FQA11N90_NL
Unit Weight	0.162260 oz

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After-Sales- und Abwicklungsbezogen

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AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..

Garantie

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Bewertungen und Rezensionen

Mehr

B**n 03.18.2022

The brand new HMC1020LP4E components from Avaq exceeded my expectations. Their quality and performance were top-notch, ensuring a successful project outcome. Highly recommended! - Satisfied Buyer

Z**e 04.15.2021

Cainiao super economy, delivery-43day

H**n 09.27.2020

The customer service provided by Avaq was exceptional. They were quick to respond and resolved my queries promptly.

A**n 02.25.2020

Shipping 20 days. Quality acceptable