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Power MOSFET, P-Channel, QFET®, -200 V, -11.5 A, 470 mΩ, D2PAK
D2PAKHersteller:
onsemi
Herstellerteil #:
FQB12P20TM
Datenblatt:
Pbfree Code:
Yes
Part Life Cycle Code:
Active
Reach Compliance Code:
not_compliant
ECCN Code:
EAR99
EDA/CAD Modelle:
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This P-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Source Content uid | FQB12P20TM | Pbfree Code | Yes |
Part Life Cycle Code | Active | Reach Compliance Code | not_compliant |
ECCN Code | EAR99 | Factory Lead Time | 40 Weeks |
Additional Feature | FAST SWITCHING | Avalanche Energy Rating (Eas) | 810 mJ |
Case Connection | DRAIN | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 200 V | Drain Current-Max (ID) | 11.5 A |
Drain-source On Resistance-Max | 0.47 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | TO-263AB | JESD-30 Code | R-PSSO-G2 |
JESD-609 Code | e3 | Moisture Sensitivity Level | 1 |
Number of Elements | 1 | Number of Terminals | 2 |
Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
Peak Reflow Temperature (Cel) | 245 | Polarity/Channel Type | P-CHANNEL |
Power Dissipation-Max (Abs) | 120 W | Pulsed Drain Current-Max (IDM) | 46 A |
Qualification Status | Not Qualified | Surface Mount | YES |
Terminal Finish | MATTE TIN | Terminal Form | GULL WING |
Terminal Position | SINGLE | Time@Peak Reflow Temperature-Max (s) | 30 |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
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