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Siehe Technische Spezifikationen

IPP024N08NF2SAKMA1 +BOM

N-Channel 80 V 28A (Ta), 182A (Tc) 3.8W (Ta), 214W (Tc) Through Hole PG-TO220-3

Hersteller:

Infineon Technologies Corporation
Herstellerteil #:

IPP024N08NF2SAKMA1
Datenblatt:

IPP024N08NF2SAKMA1 Datenblatt (PDF)
Series:

StrongIRFET™ 2
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

80 V
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an IPP024N08NF2SAKMA1

IPP024N08NF2SAKMA1 Allgemeine Beschreibung

N-Channel 80 V 28A (Ta), 182A (Tc) 3.8W (Ta), 214W (Tc) Through Hole PG-TO220-3

Infineon Technologies Corporation Inventar

Hauptmerkmale

Broad availability from distribution partners
Excellent price/performance ratio
Ideal for high- and low- switching frequency
Industry standard footprint through-hole package
High current rating
Capable of wave-soldering
Multi-vendor compatibility
Right-fit products
Supports a wide variety of applications
Standard pinout allows for drop-in replacement
Increased current carrying capability
Ease of manufacturing

Infineon Technologies Corporation Originalbestand

Anwendung

Power Management (SMPS)
Adapter
Motor drives
Battery powered applications
Battery management
UPS
Light electric vehicles

Spezifikationen

Category	Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs	Series	StrongIRFET™ 2
FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80 V	Current - Continuous Drain (Id) @ 25°C	28A (Ta), 182A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V	Rds On (Max) @ Id, Vgs	2.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	3.8V @ 139µA	Gate Charge (Qg) (Max) @ Vgs	133 nC @ 10 V
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	6200 pF @ 40 V
FET Feature	-	Power Dissipation (Max)	3.8W (Ta), 214W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	Mounting Type	Through Hole
Base Product Number	IPP024N	RHoS	yes
PBFree	yes	HalogenFree	yes
Product Category	MOSFET	Mounting Style	Through Hole
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	80 V	Id - Continuous Drain Current	182 A
Rds On - Drain-Source Resistance	2.4 mOhms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	3.8 V	Qg - Gate Charge	89 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 175 C
Pd - Power Dissipation	214 W	Channel Mode	Enhancement
Product Type	MOSFET	Factory Pack Quantity	1000
Subcategory	MOSFETs	Part # Aliases	IPP024N08NF2S SP005548843

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Verpackung

AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..