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Siehe Technische Spezifikationen

IPP320N20N3GXKSA1 +BOM

With its advanced design and specifications, the IPP320N20N3GXKSA1 offers superior performance and reliability in power management systems

Hersteller:

Infineon Technologies Corporation
Herstellerteil #:

IPP320N20N3GXKSA1
Datenblatt:

IPP320N20N3GXKSA1 Datenblatt (PDF)
RHoS:

yes
PBFree:

yes
HalogenFree:

yes
Series:

OptiMOS™
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an IPP320N20N3GXKSA1

IPP320N20N3GXKSA1 Allgemeine Beschreibung

The IPP320N20N3GXKSA1 transistor is a high-performance N-Channel component with a single configuration, delivering a continuous drain current of 34A and supporting a drain-source voltage of 200V. Its low ON resistance of 32 mOhm ensures efficient power flow, while the gate-source voltage of 20V controls its operation effectively. This transistor boasts a fast fall time of 4ns and a rise time of 9ns, indicating quick switching capabilities. With a turn-OFF delay time of 21ns and a turn-ON delay time of 11ns, it demonstrates reliable performance in various applications. Operating temperature ranges from -55°C to 175°C, providing versatility for different environments. Packaged in a TO-220 format with 3 pins, this transistor is designed for easy through hole mounting and comes in a tube packaging for convenience. With a power dissipation of 136W, it is a robust choice for demanding applications

Infineon Technologies Corporation Inventar

Hauptmerkmale

Industry’s lowest R
DS(on)
Lowest Q
g
gd
World’s lowest FOM RoHS compliant halogen free MSL 1 rated
Highest efficiency
Highest power density
Lowest board space consumption
Minimal device paralleling required
System cost improvement
Enviromentally friendly
Easy-to-design-in products

Infineon Technologies Corporation Originalbestand

Spezifikationen

RHoS	yes	PBFree	yes
HalogenFree	yes	Series	OptiMOS™
FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V	Current - Continuous Drain (Id) @ 25°C	34A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V	Rds On (Max) @ Id, Vgs	32mOhm @ 34A, 10V
Vgs(th) (Max) @ Id	4V @ 90µA	Gate Charge (Qg) (Max) @ Vgs	29 nC @ 10 V
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	2350 pF @ 100 V
Power Dissipation (Max)	136W (Tc)	Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole	Base Product Number	IPP320

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AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..