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Siehe Technische Spezifikationen

IPSA70R450P7SAKMA1 +BOM

TO-Tube-Based Power Electronic Component for Pin Connecti

Hersteller:

Infineon Technologies Corporation
Herstellerteil #:

IPSA70R450P7SAKMA1
Datenblatt:

IPSA70R450P7SAKMA1 Datenblatt (PDF)
Technology:

Si
Mounting Style:

Through Hole
Number Of Channels:

1 Channel
Transistor Polarity:

N-Channel
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an IPSA70R450P7SAKMA1

IPSA70R450P7SAKMA1 Allgemeine Beschreibung

N-Channel 700 V 10A (Tc) 50W (Tc) Through Hole PG-TO251-3

Infineon Technologies Corporation Inventar

Hauptmerkmale

Extremely low FOM R
DS(on)
x E
oss
g
on
off
Highly performant technology
Low switching losses (E
oss
Highly efficient
Excellent thermal behavior
Allowing high speed switching
Integrated protection Zener diode
Optimized V
Finely graduated portfolio
Low switching losses (E
oss
Highly efficient
Excellent thermal behavior
Cost competitive technology
Up to 2.4% efficiency gain and 12K lower device temperature compared to C6 technology
Further efficiency gain at higher switching speed
Supporting less magnetic size with lower BOM costs
High ESD ruggedness up to HBM Class 2 level
Easy to drive and design-in
Enabler for smaller form factors and high power density designs
Excellent choice in selecting the best fitting product

Infineon Technologies Corporation Originalbestand

Anwendung

Aux power

Spezifikationen

Product Category:	MOSFET	Technology:	Si
Mounting Style:	Through Hole	Number of Channels:	1 Channel
Transistor Polarity:	N-Channel	Vds - Drain-Source Breakdown Voltage:	700 V
Id - Continuous Drain Current:	10 A	Rds On - Drain-Source Resistance:	370 mOhms
Vgs th - Gate-Source Threshold Voltage:	2.5 V	Vgs - Gate-Source Voltage:	16 V
Qg - Gate Charge:	13.1 nC	Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C	Pd - Power Dissipation:	50 W
Configuration:	Single	Channel Mode:	Enhancement
Packaging:	Tube	Transistor Type:	1 N-Channel
Fall Time:	20 ns	Product Type:	MOSFET
Rise Time:	6.5 ns	Factory Pack Quantity:	1500
Subcategory:	MOSFETs	Typical Turn-Off Delay Time:	70 ns
Typical Turn-On Delay Time:	16 ns	Part # Aliases:	IPSA70R450P7S SP001664824
Tags	IPSA7, IPSA, IPS	RHoS	yes
PBFree	yes	HalogenFree	yes
Product Category	MOSFET	Technology	Si
Mounting Style	Through Hole	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	700 V
Id - Continuous Drain Current	10 A	Rds On - Drain-Source Resistance	370 mOhms
Vgs - Gate-Source Voltage	- 16 V, + 16 V	Vgs th - Gate-Source Threshold Voltage	2.5 V
Qg - Gate Charge	13.1 nC	Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	50 W
Channel Mode	Enhancement	Configuration	Single
Fall Time	20 ns	Product Type	MOSFET
Rise Time	6.5 ns	Factory Pack Quantity	1500
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	70 ns	Typical Turn-On Delay Time	16 ns
Part # Aliases	IPSA70R450P7S SP001664824	Unit Weight	0.011993 oz

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