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Siehe Technische Spezifikationen

MRFE6VP100HR5 +BOM

High-reliability FET solution for industrial and commercial us

Hersteller:

NXP Semiconductor
Herstellerteil #:

MRFE6VP100HR5
Datenblatt:

MRFE6VP100HR5 Datenblatt (PDF)
F<sub>i(RF)</sub> [max] (MHz):

2000
Number Of Pins:

4
Amp Class:

AB
Test Signal:

1-TONE
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an MRFE6VP100HR5

MRFE6VP100HR5 Allgemeine Beschreibung

The MRFE6VP100HR5 RF transistor offers exceptional performance with a wide operating frequency range of 1.8MHz to 2000MHz. With a drain-source voltage of 133VDC, this transistor can handle high voltage levels with ease. The NI-780H-4L case style provides durability and efficient heat dissipation, making it suitable for demanding applications. Featuring 4 pins for easy connectivity, this transistor is easy to install and use. With a maximum operating temperature of 225°C, this transistor can withstand extreme temperatures without any issues. This product is compliant with regulations and does not contain any restricted substances

Hauptmerkmale

Thermal stable for high VSWR
Frequency range: 1-500 MHz supported
RoHS compliant for safe use ensured
EED protection integrated for reliability
Durable design for various applications

Anwendung

Wireless power
Energy efficient
Cooking devices

Spezifikationen

f<sub>i(RF)</sub> [max] (MHz)	2000	Number of pins	4
Amp Class	AB	Test Signal	1-TONE
Supply Voltage (Typ) (V)	50	Class	AB
Die Technology	LDMOS	Thermal Resistance (Spec) (℃/W)	0.38
P1dB (Typ) (dBm)	50	Security Status	COMPANY PUBLIC
Frequency (Min-Max) (MHz)	1.8,2000	Efficiency (Typ) (%)	70
Peak Power (Typ) (W)	126	Frequency Band (Hz)	1800000,2000000000
Description	Broadband RF Power LDMOS Transistor, 1.8-2000 MHz, 100 W, 50 V	f<sub>i(RF)</sub> [min] (MHz)	1.8
Output Power (Typ) (W) @ Intermodulation Level at Test Signal	100 @ CW	P1dB (Typ) (W)	100
Gain (Typ) (dB)	27.2	Power Gain (Typ) (dB) @ f (MHz)	27.2 @ 512
Frequency (Max) (MHz)	2000	Frequency (Min) (MHz)	1.8
Frequency (Min-Max) (GHz)	0.0018000001 to 2	f<sub>range</sub> [max] (MHz)	2000
f<sub>range</sub> [min] (MHz)	1.8	Rth(j-a) (K/W)	0.38
Matching	unmatched	Modes of Operation	single-tone modulation
Product Category	RF MOSFET Transistors	Transistor Polarity	N-Channel
Technology	Si	Id - Continuous Drain Current	1 A
Vds - Drain-Source Breakdown Voltage	141 V	Rds On - Drain-Source Resistance	-
Operating Frequency	1.8 MHz to 2000 MHz	Gain	26 dB
Output Power	100 W	Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 150 C	Mounting Style	SMD/SMT
Configuration	Single	Product Type	RF MOSFET Transistors
Series	MRFE6VP100H	Factory Pack Quantity	50
Subcategory	MOSFETs	Transistor Type	LDMOS FET
Type	RF Power MOSFET	Vgs - Gate-Source Voltage	- 6 V, 10 V
Vgs th - Gate-Source Threshold Voltage	2.1 V	Part # Aliases	935319905178
Unit Weight	0.225605 oz

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Garantie

365-Tage-Produkt

Qualitätsgarantie

Wir versprechen, 365 Tage Qualitätssicherung für alle unsere Produkte zu bieten.

Bewertungen und Rezensionen

Mehr

M**a 09.27.2022

Excellent product, i recommend to everyone.

J**n 05.15.2020

Pretty fast shipping. Good packing. Excellent quality. Everything works. Sociable, honest seller. I recommend. The seller is a plus.Quite fast delivery. Good packing. Excellent quality. Everything is working. Sociable, honest seller. Recommend. Seller plus sign.