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PBSS4160DSH +BOM

60 V, 1 A NPN/NPN low VCEsat (BISS) transistor

PBSS4160DSH Allgemeine Beschreibung

Engineered for excellence, the PBSS4160DSH transistor pair offers cutting-edge NPN/NPN low voltage breakthrough technology in a space-saving SOT457 (SC-74) package. Its PNP/PNP complement, the PBSS5160DS, complements its performance seamlessly. With their reliable operation and high efficiency, these transistors are perfect for small signal applications and ensure smooth functionality in various electronic systems

Nexperia Semiconductor (NXP) Inventar

Hauptmerkmale

  • Low collector-emitter saturation voltage VCEsat
  • High collector current capability: IC and ICM
  • High collector current gain (hFE) at high IC
  • High efficiency due to less heat generation
  • Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
  • AEC-Q101 qualified
Nexperia Semiconductor (NXP) Originalbestand

Anwendung

  • Dual low power switches (e.g. motors, fans)
  • Automotive applications
Nexperia Semiconductor (NXP) Inventar

Spezifikationen

Category Discrete Semiconductor ProductsTransistorsBipolar (BJT)Bipolar Transistor Arrays Series Automotive, AEC-Q100
Transistor Type 2 NPN (Dual) Current - Collector (Ic) (Max) 870mA
Voltage - Collector Emitter Breakdown (Max) 60V Vce Saturation (Max) @ Ib, Ic 250mV @ 100mA, 1A
Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 500mA, 5V
Power - Max 290mW Frequency - Transition 220MHz
Operating Temperature 150°C (TJ) Mounting Type Surface Mount
Base Product Number PBSS4160 feature-packaging Tape and Reel
feature-rad-hard feature-pin-count 6
feature-cecc-qualified No feature-esd-protection
feature-military No feature-aec-qualified Yes
feature-aec-qualified-number AEC-Q101 feature-auto-motive Yes
feature-p-pap feature-eccn-code EAR99
feature-svhc Yes feature-svhc-exceeds-threshold No

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