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TSM160N10LCR +BOM

TSM160N10LCR: Low Dropout Voltage Regulators supporting up to 100V and 46A, utilizing a Single N-Channel Power MOSFET

Hersteller:

Taiwan Semiconductor Corporation
Herstellerteil #:

TSM160N10LCR
Datenblatt:

TSM160N10LCR Datenblatt (PDF)
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

100 V
Current - Continuous Drain (Id) @ 25°C:

8A (Ta), 46A (Tc)
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an TSM160N10LCR

TSM160N10LCR Allgemeine Beschreibung

The TSM160N10LCR is a state-of-the-art N-channel MOSFET transistor that boasts high power and reliability. With a robust drain-source voltage rating of 100V and a continuous drain current rating of 160A, this transistor is engineered to deliver top-notch performance in demanding applications. Its impressively low on-resistance of 10mΩ ensures efficient power handling, making it an ideal choice for power supplies, motor control systems, and other high-power electronic devices. The TO-220 package design simplifies installation on printed circuit boards or heat sinks, further enhancing its versatility and convenience in various applications. An added advantage of the TSM160N10LCR is its low gate charge, which enables rapid switching speeds and reduces power losses, contributing to overall system efficiency. The built-in body diode provides essential protection against reverse polarity and over-voltage conditions, ensuring the integrity and longevity of the electronics it powers

Spezifikationen

FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V	Current - Continuous Drain (Id) @ 25°C	8A (Ta), 46A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V	Rds On (Max) @ Id, Vgs	16mOhm @ 8A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	73 nC @ 10 V
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	4431 pF @ 50 V
Power Dissipation (Max)	2.6W (Ta), 83W (Tc)	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Base Product Number	TSM160

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