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Siehe Technische Spezifikationen

C3M0120065D +BOM

Silicon Carbide (SiC) MOSFET

Hersteller:

Wolfspeed
Herstellerteil #:

C3M0120065D
Datenblatt:

C3M0120065D Datenblatt (PDF)
Technology:

SiC
Mounting Style:

Through Hole
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an C3M0120065D

C3M0120065D Allgemeine Beschreibung

The C3M0120065D Silicon Carbide Power MOSFET from Wolfspeed is a cutting-edge wide-bandgap semiconductor product that delivers unrivaled performance and reliability. Tailored for power switching applications, this MOSFET boasts a drain-source voltage of 1200V and a continuous drain current rating of 65A, catering to the requirements of high-voltage and high-power industrial, automotive, and renewable energy systems. Its low on-resistance and fast switching speeds enable efficient power conversion and reduced energy losses, leading to enhanced system efficiency and thermal performance. Encased in a compact and rugged TO-247 package, the MOSFET allows for seamless integration into existing designs while providing robust protection in demanding operating conditions. Furthermore, its high temperature operation capability of up to 175°C ensures consistent performance in challenging environments. With advanced design and construction, the C3M0120065D MOSFET offers enhanced electrical and thermal performance, guaranteeing long-term reliability and durability

Spezifikationen

Product Category	MOSFET	Technology	SiC
Mounting Style	Through Hole	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	650 V
Id - Continuous Drain Current	22 A	Rds On - Drain-Source Resistance	120 mOhms
Vgs - Gate-Source Voltage	- 4 V, + 15 V	Vgs th - Gate-Source Threshold Voltage	3.6 V
Qg - Gate Charge	28 nC	Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 175 C	Pd - Power Dissipation	98 W
Channel Mode	Enhancement	Configuration	Single
Fall Time	8 ns	Forward Transconductance - Min	5 S
Height	21.1 mm	Length	16.13 mm
Product	MOSFET	Product Type	MOSFET
Rise Time	13 ns	Factory Pack Quantity	30
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	17 ns	Typical Turn-On Delay Time	7 ns
Width	5.21 mm

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