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IKA08N65H5XKSA1 +BOM

IGBT 650 V 10.8 A 31.2 W Through Hole PG-TO220-3-111

Hersteller:

Infineon Technologies Corporation
Herstellerteil #:

IKA08N65H5XKSA1
Datenblatt:

IKA08N65H5XKSA1 Datenblatt (PDF)
Series:

TrenchStop®
Voltage - Collector Emitter Breakdown (Max):

650 V
Current - Collector (Ic) (Max):

10.8 A
Current - Collector Pulsed (Icm):

24 A

IKA08N65H5XKSA1 Allgemeine Beschreibung

IGBT 650 V 10.8 A 31.2 W Through Hole PG-TO220-3-111

Infineon Technologies Corporation Inventar

Hauptmerkmale

650 V breakthrough voltage
Compared to best-in-class HighSpeed 3 family
Factor 2.5 lower Q
g
Factor 2 reduction in switching losses
200mV reduction in V
CEsat
Co-packed with Rapid Si-diode technology
Low C
OES
OSS
Mild positive temperature coefficient V
CEsat
Temperature stability of V
f
best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability
50 V increase in the bus voltage possible without compromising reliability
Higher power density design

Infineon Technologies Corporation Originalbestand

Anwendung

Uninterruptible power supply (UPS)
Industrial heating and welding

Spezifikationen

Category	Discrete Semiconductor ProductsTransistorsIGBTsSingle IGBTs	Series	TrenchStop®
IGBT Type	-	Voltage - Collector Emitter Breakdown (Max)	650 V
Current - Collector (Ic) (Max)	10.8 A	Current - Collector Pulsed (Icm)	24 A
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 8A	Power - Max	31.2 W
Switching Energy	70µJ (on), 30µJ (off)	Input Type	Standard
Gate Charge	22 nC	Td (on/off) @ 25°C	11ns/115ns
Test Condition	400V, 4A, 48Ohm, 15V	Reverse Recovery Time (trr)	40 ns
Operating Temperature	-40°C ~ 175°C (TJ)	Mounting Type	Through Hole
Base Product Number	IKA08N65	RHoS	yes
PBFree	yes	HalogenFree	yes
Product Category	IGBT Transistors	Technology	Si
Mounting Style	Through Hole	Configuration	Single
Collector- Emitter Voltage VCEO Max	650 V	Collector-Emitter Saturation Voltage	1.65 V
Maximum Gate Emitter Voltage	- 20 V, + 20 V	Continuous Collector Current at 25 C	10.8 A
Pd - Power Dissipation	31.2 W	Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 175 C	Gate-Emitter Leakage Current	100 nA
Product Type	IGBT Transistors	Factory Pack Quantity	500
Subcategory	IGBTs	Tradename	TRENCHSTOP
Part # Aliases	IKA08N65H5 SP001001722	Unit Weight	0.211644 oz

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