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Siehe Technische Spezifikationen

IKFW40N60DH3EXKSA1 +BOM

IGBT Trench Field Stop 600 V 34 A 111 W Through Hole PG-TO247-3-AI

Hersteller:

Infineon Technologies Corporation
Herstellerteil #:

IKFW40N60DH3EXKSA1
Datenblatt:

IKFW40N60DH3EXKSA1 Datenblatt (PDF)
Series:

TrenchStop™
IGBT Type:

Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):

600 V
Current - Collector (Ic) (Max):

34 A
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an IKFW40N60DH3EXKSA1

IKFW40N60DH3EXKSA1 Allgemeine Beschreibung

IGBT Trench Field Stop 600 V 34 A 111 W Through Hole PG-TO247-3-AI

Infineon Technologies Corporation Inventar

Hauptmerkmale

Short circuit withstand time 5μs at>
Positive temperature coefficient in V
CE(sat)
Low EMI
Very soft, fast recovery anti-parallel diode
Maximum junction temperature 175°C
2500 V
RMS
100 % tested isolated mounting surface
Pb-free lead plating; RoHS compliant
Qualified for industrial applications according to the relevant tests of JEDEC 47/20/22
No need to use isolation material and thermal grease
35% reduction in assembling time compared to standard TO-247 with Iso-foils
Increased yield eliminating misalignments of isolation foils
Up to 10°C lower T
c
Up to 20% I
out
Complete manufacturing process control
Easy paralleling

Infineon Technologies Corporation Originalbestand

Anwendung

Residential air conditioning: Smart and efficient cooling

Spezifikationen

Category	Discrete Semiconductor ProductsTransistorsIGBTsSingle IGBTs	Series	TrenchStop™
IGBT Type	Trench Field Stop	Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	34 A	Current - Collector Pulsed (Icm)	90 A
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 30A	Power - Max	111 W
Switching Energy	870µJ (on), 360µJ (off)	Input Type	Standard
Gate Charge	107 nC	Td (on/off) @ 25°C	18ns/144ns
Test Condition	400V, 30A, 10Ohm, 15V	Reverse Recovery Time (trr)	72 ns
Operating Temperature	-40°C ~ 175°C (TJ)	Mounting Type	Through Hole
Base Product Number	IKFW40	RHoS	yes
PBFree	yes	HalogenFree	yes
Product Category	IGBT Transistors	Technology	Si
Mounting Style	Through Hole	Configuration	Single
Collector- Emitter Voltage VCEO Max	600 V	Collector-Emitter Saturation Voltage	2.3 V
Maximum Gate Emitter Voltage	- 20 V, 20 V	Continuous Collector Current at 25 C	34 A
Pd - Power Dissipation	111 W	Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 175 C	Continuous Collector Current Ic Max	44 A
Gate-Emitter Leakage Current	100 nA	Product Type	IGBT Transistors
Factory Pack Quantity	240	Subcategory	IGBTs
Tradename	TRENCHSTOP	Part # Aliases	IKFW40N60DH3E SP001502652
Unit Weight	0.208709 oz

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