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Siehe Technische Spezifikationen

IKB30N65ES5ATMA1 +BOM

IGBT Trench Field Stop 650 V 62 A 188 W Surface Mount PG-TO263-3

Hersteller:

Infineon Technologies Corporation
Herstellerteil #:

IKB30N65ES5ATMA1
Datenblatt:

IKB30N65ES5ATMA1 Datenblatt (PDF)
Series:

TrenchStop™ 5
IGBT Type:

Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):

650 V
Current - Collector (Ic) (Max):

62 A
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an IKB30N65ES5ATMA1

IKB30N65ES5ATMA1 Allgemeine Beschreibung

IGBT Trench Field Stop 650 V 62 A 188 W Surface Mount PG-TO263-3

Infineon Technologies Corporation Inventar

Hauptmerkmale

Very low V
CEsat
c
Soft current fall characteristics with no tail current
Symmetrical, low voltage overshoot
Gate voltage under control (no oscillation). No risk of unwanted turn-on of device and no need for gate clamping
Maximum junction temperature>
Qualified according to JEDEC standards
V
CE(peak)
Suitable for use with single turn-on / turn-off gate resistor
No need for gate clamping components
Gate drivers with Miller clamping not required
Reduction in the EMI filtering needed
Excellent for paralleling

Infineon Technologies Corporation Originalbestand

Anwendung

Energy Storage Systems
Industrial heating and welding
Solutions for photovoltaic energy systems
Uninterruptible Power Supplies (UPS)

Spezifikationen

Category	Discrete Semiconductor ProductsTransistorsIGBTsSingle IGBTs	Series	TrenchStop™ 5
IGBT Type	Trench Field Stop	Voltage - Collector Emitter Breakdown (Max)	650 V
Current - Collector (Ic) (Max)	62 A	Current - Collector Pulsed (Icm)	120 A
Vce(on) (Max) @ Vge, Ic	1.7V @ 15V, 30A	Power - Max	188 W
Switching Energy	560µJ (on), 320µJ (off)	Input Type	Standard
Gate Charge	70 nC	Td (on/off) @ 25°C	17ns/124ns
Test Condition	400V, 30A, 13Ohm, 15V	Reverse Recovery Time (trr)	75 ns
Operating Temperature	-40°C ~ 175°C (TJ)	Mounting Type	Surface Mount
Base Product Number	IKB30N65	RHoS	yes
PBFree	yes	HalogenFree	yes
Product Category	IGBT Transistors	Technology	Si
Mounting Style	SMD/SMT	Configuration	Single
Collector- Emitter Voltage VCEO Max	650 V	Collector-Emitter Saturation Voltage	1.35 V
Maximum Gate Emitter Voltage	- 20 V, 20 V	Continuous Collector Current at 25 C	62 A
Pd - Power Dissipation	188 W	Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 175 C	Continuous Collector Current Ic Max	62 A
Gate-Emitter Leakage Current	100 nA	Product Type	IGBT Transistors
Factory Pack Quantity	1000	Subcategory	IGBTs
Tradename	TRENCHSTOP	Part # Aliases	IKB30N65ES5 SP001502572
Unit Weight	0.055019 oz

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