Diese Website verwendet Cookies. Durch die Nutzung dieser Website stimmen Sie der Verwendung von Cookies zu. Weitere Informationen finden Sie in unseren Datenschutzrichtlinie.

Die Bilder dienen nur als Referenz,

Siehe Technische Spezifikationen

IPB027N10N5ATMA1 +BOM

Power MOSFET, 120A current rating, 100V voltage, low 0.0027 ohm resistance, N-channel

Hersteller:

INFINEON
Herstellerteil #:

IPB027N10N5ATMA1
Datenblatt:

IPB027N10N5ATMA1 Datenblatt (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an IPB027N10N5ATMA1

IPB027N10N5ATMA1 Allgemeine Beschreibung

The IPB027N10N5ATMA1 stands out with a myriad of features tailored for modern power management needs. Optimized specifically for synchronous rectification, these MOSFETs shine in environments demanding high switching frequencies. Notably, they offer a remarkable reduction in output capacitance by up to 44%, alongside a substantial 43% decrease in RDS(on) compared to the previous generation. These enhancements translate into tangible benefits for system efficiency, switching and conduction losses reduction, minimized need for paralleling, heightened power density, and mitigated voltage overshoot

Hauptmerkmale

N-channel, normal level
Excellent gate charge x R DS(on) product (FOM)
Extremely low on-resistance R DS(on)
High current capability
175 °C operating temperature
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC1) for target application
Halogen-free according to IEC61249-2-21

Spezifikationen

Pbfree Code	Yes	Part Life Cycle Code	Active
Reach Compliance Code	not_compliant	ECCN Code	EAR99
Factory Lead Time	52 Weeks	Avalanche Energy Rating (Eas)	461 mJ
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	100 V	Drain Current-Max (ID)	120 A
Drain-source On Resistance-Max	0.0027 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-263AB	JESD-30 Code	R-PSSO-G2
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	2
Operating Mode	ENHANCEMENT MODE	Polarity/Channel Type	N-CHANNEL
Pulsed Drain Current-Max (IDM)	480 A	Surface Mount	YES
Terminal Finish	TIN	Terminal Form	GULL WING
Terminal Position	SINGLE	Transistor Application	SWITCHING
Transistor Element Material	SILICON	Series	OptiMOS™
FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V	Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V	Rds On (Max) @ Id, Vgs	2.7mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	3.8V @ 184µA	Gate Charge (Qg) (Max) @ Vgs	139 nC @ 10 V
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	10300 pF @ 50 V
Power Dissipation (Max)	250W (Tc)	Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount	Base Product Number	IPB027

Servicerichtlinien und andere

After-Sales- und Abwicklungsbezogen

Zahlung

Bezahlverfahren

TT/Überweisung

Paypal

Western Union

Geldgramm

Für alternative Zahlungskanäle kontaktieren Sie uns bitte unter:

[email protected]

Versand & Verpackung

Versandart

Fedex

UPS

DHL

NTN

Verpackung

AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..