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Siehe Technische Spezifikationen

IPB110P06LMATMA1 +BOM

P-Channel 60 V 100A (Tc) 300W (Tc) Surface Mount PG-TO263-3-2

Hersteller:

INFINEON
Herstellerteil #:

IPB110P06LMATMA1
Datenblatt:

IPB110P06LMATMA1 Datenblatt (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
Avalanche Energy Rating (Eas):

1616 mJ
Case Connection:

DRAIN
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an IPB110P06LMATMA1

IPB110P06LMATMA1 Allgemeine Beschreibung

The IPB110P06LMATMA1 power MOSFET transistor is a top-of-the-line component manufactured by Infineon Technologies, specifically designed for demanding automotive applications. With a continuous drain current of 110A and a maximum drain-source voltage of -60V, this MOSFET offers exceptional power efficiency and reliability. Its low on-state resistance of 6.8mΩ ensures minimal power losses, making it an ideal choice for power switching applications in the automotive industry. Housed in a TO-263 package, this MOSFET provides both thermal resistance and mechanical ruggedness, perfectly suited for the challenging conditions of automotive environments. Furthermore, it meets the stringent AEC-Q101 automotive qualification standard, guaranteeing its durability and dependability in harsh operating conditions. With advanced technology incorporated into its design, the IPB110P06LMATMA1 is optimized for use in automotive powertrain, chassis, and safety systems. Its versatility makes it suitable for a wide range of applications including motor control, DC-DC converters, and power distribution in electric and hybrid electric vehicles, making it a valuable asset for automotive engineers and designers

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Purchase Description
Data Sheet Content
Package Specifications

Anwendung

Industrial energy solutions
High-performance inverters

Spezifikationen

Part Life Cycle Code	Active	Reach Compliance Code	not_compliant
Avalanche Energy Rating (Eas)	1616 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	60 V
Drain Current-Max (ID)	100 A	Drain-source On Resistance-Max	0.011 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	Feedback Cap-Max (Crss)	260 pF
JEDEC-95 Code	TO-263	JESD-30 Code	R-PSSO-G2
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	2
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	175 °C
Operating Temperature-Min	-55 °C	Polarity/Channel Type	P-CHANNEL
Power Dissipation-Max (Abs)	300 W	Pulsed Drain Current-Max (IDM)	400 A
Surface Mount	YES	Terminal Finish	TIN
Terminal Form	GULL WING	Terminal Position	SINGLE
Transistor Element Material	SILICON

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Verpackung

AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..