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Siehe Technische Spezifikationen

IPD031N06L3G +BOM

60V N-Channel Power MOSFET with 100A current rating

Hersteller:

INFINEON
Herstellerteil #:

IPD031N06L3G
Datenblatt:

IPD031N06L3G Datenblatt (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Pin Count:

4
Reach Compliance Code:

compliant
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an IPD031N06L3G

IPD031N06L3G Allgemeine Beschreibung

The IPD031N06L3G Power Field-Effect Transistor is a high-performing component designed for a variety of electronic applications. With a current rating of 100A and a voltage rating of 60V, this N-Channel transistor offers reliable performance in demanding circuit designs. The low on-resistance of 0.0031ohm ensures efficient power delivery, making it ideal for power management systems. The TO-252AA package, featuring a Green Plastic housing, provides a durable and environmentally friendly solution for circuit integration. This 1-Element Silicon Metal-oxide Semiconductor FET is designed for ease of use with its 3 PIN configuration, making installation quick and simple

Hauptmerkmale

Fast switching MOSFET for SMPS

Optimized technology for DC/DC converters

Qualified according to JEDEC1) for target applications

N-channel, logic level

Excellent gate charge x R DS(on) product (FOM)

Very low on-resistance R DS(on)

Avalanche rated

Pb-free plating; RoHS compliant

Halogen-free according to IEC61249-2-21 *

Spezifikationen

Source Content uid	IPD031N06L3G	Pbfree Code	Yes
Part Life Cycle Code	Active	Pin Count	4
Reach Compliance Code	compliant	ECCN Code	EAR99
Additional Feature	LOGIC LEVEL COMPATIBLE	Avalanche Energy Rating (Eas)	149 mJ
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	60 V	Drain Current-Max (ID)	100 A
Drain-source On Resistance-Max	0.0031 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-252AA	JESD-30 Code	R-PSSO-G2
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	2
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	175 °C
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	167 W	Pulsed Drain Current-Max (IDM)	400 A
Qualification Status	Not Qualified	Surface Mount	YES
Terminal Finish	TIN	Terminal Form	GULL WING
Terminal Position	SINGLE	Transistor Application	SWITCHING
Transistor Element Material	SILICON	Series	OptiMOS™
FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V	Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V	Rds On (Max) @ Id, Vgs	3.1mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	2.2V @ 93µA	Gate Charge (Qg) (Max) @ Vgs	79 nC @ 4.5 V
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	13000 pF @ 30 V
Power Dissipation (Max)	167W (Tc)	Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount	Base Product Number	IPD031

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