Bezahlverfahren
![hsbc](/img/service-policies-hsbc.png)
![paypal](/img/service-policies-paypal.png)
![wu](/img/service-policies-wu.png)
![mg](/img/service-policies-mg.png)
Infineon IPD034N06N3G N-channel MOSFET Transistor, 100 A, 60 V, 3-Pin TO-252
SOT-252Hersteller:
Herstellerteil #:
IPD034N06N3G
Datenblatt:
Pbfree Code:
Yes
Part Life Cycle Code:
Active
Pin Count:
4
Reach Compliance Code:
compliant
Senden Sie alle Stücklisten an
[email protected],
oder füllen Sie das untenstehende Formular aus, um ein Angebot für IPD034N06N3G zu erhalten. Garantierte Antwort innerhalb
12hr.
Bitte füllen Sie das kurze Formular unten aus und wir werden Ihnen umgehend ein Angebot zukommen lassen..
Infineon Technologies presents the IPD034N06N3G power MOSFET as a best-in-class offering within the OptiMOS™ 3 lineup, renowned for its high efficiency and superior performance characteristics. Delivering a maximum drain-source voltage of 60 volts, this MOSFET caters to the needs of a wide range of low to medium voltage applications, providing versatility and reliability in various power conversion scenarios. Its outstanding current handling capability, capable of supporting continuous drain currents up to 75 amperes, positions it as a top choice for high-power applications that prioritize performance and endurance. Featuring an impressively low on-resistance of just 3.4 milliohms at a gate-source voltage of 10 volts, the IPD034N06N3G ensures minimal power dissipation and optimal efficiency during switching activities. Additionally, with a gate charge of 40 nanocoulombs, this MOSFET demonstrates efficient and effective switching characteristics for seamless operation. Packaged in the convenient and efficient TO-252 (DPAK) form factor, this MOSFET strikes an ideal balance between thermal performance and ease of installation, making it a go-to component for demanding power conversion applications
Source Content uid | IPD034N06N3G | Pbfree Code | Yes |
Part Life Cycle Code | Active | Pin Count | 4 |
Reach Compliance Code | compliant | ECCN Code | EAR99 |
Avalanche Energy Rating (Eas) | 149 mJ | Case Connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 60 V |
Drain Current-Max (ID) | 100 A | Drain-source On Resistance-Max | 0.0034 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | JEDEC-95 Code | TO-252AA |
JESD-30 Code | R-PSSO-G2 | JESD-609 Code | e3 |
Moisture Sensitivity Level | 1 | Number of Elements | 1 |
Number of Terminals | 2 | Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 175 °C | Peak Reflow Temperature (Cel) | 260 |
Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 167 W |
Pulsed Drain Current-Max (IDM) | 400 A | Qualification Status | Not Qualified |
Surface Mount | YES | Terminal Finish | TIN |
Terminal Form | GULL WING | Terminal Position | SINGLE |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
After-Sales- und Abwicklungsbezogen
Bezahlverfahren
Für alternative Zahlungskanäle kontaktieren Sie uns bitte unter:
[email protected]Versandart
AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..
365-Tage-Produkt
Qualitätsgarantie
Wir versprechen, 365 Tage Qualitätssicherung für alle unsere Produkte zu bieten.
Menge. | Einzelpreis | Ext. Preis |
---|---|---|
1+ | $1,271 | $1,27 |
10+ | $1,074 | $10,74 |
30+ | $0,967 | $29,01 |
100+ | $0,845 | $84,50 |
500+ | $0,758 | $379,00 |
1000+ | $0,734 | $734,00 |
Die unten angegebenen Preise dienen nur als Referenz.