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Siehe Technische Spezifikationen

IPD50P04P4-13 +BOM

Trans MOSFET P-CH 40V 50A Automotive 3-Pin(2+Tab) DPAK T/R

Hersteller:

INFINEON
Herstellerteil #:

IPD50P04P4-13
Datenblatt:

IPD50P04P4-13 Datenblatt (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Pin Count:

4
Reach Compliance Code:

not_compliant
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an IPD50P04P4-13

IPD50P04P4-13 Allgemeine Beschreibung

The IPD50P04P4-13 P-Channel FET is a premium semiconductor device engineered for excellence. Boasting a high current capacity of 50A and a low on-resistance of 0.0126ohm, this transistor offers exceptional performance in a compact TO-252 package. Its environmentally friendly green plastic construction not only looks sleek but also ensures long-lasting durability. Whether used in consumer electronics or power distribution systems, the IPD50P04P4-13 sets a new standard for power transistors

Hauptmerkmale

Reduced energy stored in output capacitance (Eoss)
High body diode ruggedness
Reduced reverse recovery charge (Qrr)
Reduced gate charge (Qg)
Overall Features
BENEFITS
Reduction of switching losses, improvement of light load efficiency
Higher reliability under critical operating conditions
Lower possibility of hard commutation in resonant topologies
Improvement in light load efficiency
Lower gate drive capability required
Easy control of switching behavior
Outstanding reliability with proven CoolMOSTM quality

Spezifikationen

Source Content uid	IPD50P04P4-13	Pbfree Code	Yes
Part Life Cycle Code	Active	Pin Count	4
Reach Compliance Code	not_compliant	ECCN Code	EAR99
Avalanche Energy Rating (Eas)	18 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	40 V
Drain Current-Max (ID)	50 A	Drain-source On Resistance-Max	0.0126 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	TO-252
JESD-30 Code	R-PSSO-G2	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	2	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	175 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	P-CHANNEL	Power Dissipation-Max (Abs)	58 W
Surface Mount	YES	Terminal Finish	TIN
Terminal Form	GULL WING	Terminal Position	SINGLE
Transistor Element Material	SILICON	Product Category	MOSFET
Technology	Si	Mounting Style	SMD/SMT
Transistor Polarity	P-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	40 V	Id - Continuous Drain Current	50 A
Rds On - Drain-Source Resistance	12.6 mOhms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	2 V	Qg - Gate Charge	39 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 175 C
Pd - Power Dissipation	58 W	Channel Mode	Enhancement
Qualification	AEC-Q101	Tradename	OptiMOS
Series	OptiMOS-P2	Fall Time	28 ns
Height	2.3 mm	Length	6.5 mm
Product Type	MOSFET	Rise Time	10 ns
Factory Pack Quantity	2500	Subcategory	MOSFETs
Transistor Type	1 P-Channel	Typical Turn-Off Delay Time	22 ns
Typical Turn-On Delay Time	17 ns	Width	6.22 mm
Part # Aliases	IPD5P4P413XT SP000840204 IPD50P04P413ATMA1	Unit Weight	0.011640 oz

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AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..