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TO-252-2 (DPAK) 63W Power MOSFET
TO-252-3Hersteller:
Herstellerteil #:
IPD60R600P6
Datenblatt:
Pbfree Code:
No
Part Life Cycle Code:
Active
Reach Compliance Code:
not_compliant
ECCN Code:
EAR99
EDA/CAD Modelle:
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Boasting impressive specifications and top-notch performance, the IPD60R600P6 emerges as a standout power MOSFET transistor suitable for a diverse range of applications. Featuring a robust 600V drain-source voltage rating and a continuous drain current of 60A, this MOSFET is well-equipped to tackle high-power demands with confidence. Its low on-resistance of 0.06 ohms plays a pivotal role in minimizing power losses and enhancing overall efficiency, making it an ideal candidate for power-sensitive applications. Furthermore, Infineon Technologies' cutting-edge technology ensures that the IPD60R600P6 delivers not only reliable operation but also exceptional thermal performance. Its TO-252 package with a surface-mount design streamlines installation and integration into electronic circuits, adding to its appeal. Whether it's power supplies, motor control, or other high-power applications, this MOSFET proves to be a valuable asset, capable of handling high current and voltage levels while keeping power dissipation to a minimum. With a strong emphasis on efficiency and reliability, the IPD60R600P6 presents itself as a versatile and trustworthy option for demanding applications, consistently delivering superior performance and peace of mind
PFC stages, hard switching PWM stages and resonant switching stages
for e.g. PC Silverbox, Adapter, LCD&PDPTV, Lighting, Server, Telecom
and UPS.
Source Content uid | IPD60R600P6 | Pbfree Code | No |
Part Life Cycle Code | Active | Reach Compliance Code | not_compliant |
ECCN Code | EAR99 | Avalanche Energy Rating (Eas) | 133 mJ |
Case Connection | DRAIN | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 600 V | Drain Current-Max (ID) | 7.3 A |
Drain-source On Resistance-Max | 0.6 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | TO-252 | JESD-30 Code | R-PSSO-G2 |
JESD-609 Code | e3 | Moisture Sensitivity Level | 1 |
Number of Elements | 1 | Number of Terminals | 2 |
Operating Mode | ENHANCEMENT MODE | Polarity/Channel Type | N-CHANNEL |
Pulsed Drain Current-Max (IDM) | 18 A | Surface Mount | YES |
Terminal Finish | TIN | Terminal Form | GULL WING |
Terminal Position | SINGLE | Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
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Menge. | Einzelpreis | Ext. Preis |
---|---|---|
1+ | $1,276 | $1,28 |
10+ | $1,097 | $10,97 |
30+ | $0,999 | $29,97 |
100+ | $0,889 | $88,90 |
500+ | $0,839 | $419,50 |
1000+ | $0,816 | $816,00 |
Die unten angegebenen Preise dienen nur als Referenz.