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Siehe Technische Spezifikationen

IPD80P03P4L-07 +BOM

Product IPD80P03P4L-07: P-channel TO-252 MOSFET with 30V, 80A, and 5.6mΩ@10V

Hersteller:

INFINEON
Herstellerteil #:

IPD80P03P4L-07
Datenblatt:

IPD80P03P4L-07 Datenblatt (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Pin Count:

4
Reach Compliance Code:

not_compliant
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an IPD80P03P4L-07

IPD80P03P4L-07 Allgemeine Beschreibung

With Infineon Technologies' IPD80P03P4L-07, engineers can confidently tackle high-power challenges with a MOSFET that offers exceptional performance and efficiency. Whether it's powering industrial equipment, controlling motors, or managing battery systems, this MOSFET delivers the power and reliability needed for critical applications. Its superior specifications, including high current and voltage ratings, along with its low on-resistance, make it a standout choice for high-power designs where quality and performance are non-negotiable

Hauptmerkmale

P-channel - Logic Level - Enhancement mode
AEC qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package (RoHS compliant)
100% Avalanche tested
Intended for reverse battery protection

Spezifikationen

Source Content uid	IPD80P03P4L-07	Pbfree Code	Yes
Part Life Cycle Code	Active	Pin Count	4
Reach Compliance Code	not_compliant	ECCN Code	EAR99
HTS Code	8541.29.00.95	Additional Feature	LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas)	135 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	30 V
Drain Current-Max (ID)	80 A	Drain-source On Resistance-Max	0.0068 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	TO-252
JESD-30 Code	R-PSSO-G2	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	2	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	175 °C	Polarity/Channel Type	P-CHANNEL
Power Dissipation-Max (Abs)	88 W	Pulsed Drain Current-Max (IDM)	320 A
Qualification Status	Not Qualified	Surface Mount	YES
Terminal Finish	TIN	Terminal Form	GULL WING
Terminal Position	SINGLE	Transistor Application	SWITCHING
Transistor Element Material	SILICON

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