Bezahlverfahren
IPW60R060P7XKSA1 +BOM
N-Channel 600 V 48A (Tc) 164W (Tc) Through Hole PG-TO247-3
TO-247-3-
Hersteller:
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Herstellerteil #:
IPW60R060P7XKSA1
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Datenblatt:
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Technology:
Si
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Mounting Style:
Through Hole
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Transistor Polarity:
N-Channel
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Number Of Channels:
1 Channel
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EDA/CAD Modelle:
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Verfügbarkeit: 7072 Stck
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IPW60R060P7XKSA1 Allgemeine Beschreibung
When it comes to power MOSFETs, the IPW60R060P7XKSA1 stands out for its exceptional performance and reliability. With a focus on efficiency and low power consumption, this MOSFET is ideal for applications where every watt counts. Its high voltage rating and current capacity make it a versatile choice for various electronic projects, while its low on-state resistance ensures minimal power loss and maximum efficiency
Hauptmerkmale
- Surface mount package
- Low noise and ripples
- Ergonomic design for comfort
Anwendung
- High performance motors
- Advanced energy solutions
- Smart grid applications
Spezifikationen
Product Category | MOSFET | Technology | Si |
Mounting Style | Through Hole | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 600 V |
Id - Continuous Drain Current | 48 A | Rds On - Drain-Source Resistance | 49 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 3 V |
Qg - Gate Charge | 67 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 164 W |
Channel Mode | Enhancement | Tradename | CoolMOS |
Series | CoolMOS P7 | Configuration | Single |
Fall Time | 23 ns | Product Type | MOSFET |
Rise Time | 12 ns | Factory Pack Quantity | 240 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 79 ns | Typical Turn-On Delay Time | 23 ns |
Part # Aliases | IPW60R060P7 SP001647042 | Unit Weight | 0.211644 oz |
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In Stock: 7.072
Minimum Order: 1
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