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Siehe Technische Spezifikationen

NJL1302DG +BOM

Bipolar Power Transistor, PNP, ThermalTrak™, 15 A, 260 V

Hersteller:

onsemi
Herstellerteil #:

NJL1302DG
Datenblatt:

NJL1302DG Datenblatt (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Pin Count:

5
Reach Compliance Code:

not_compliant
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an NJL1302DG

NJL1302DG Allgemeine Beschreibung

With its advanced design, the NJL1302DG offers a solution to the common challenges faced in audio amplifier applications. By minimizing thermal equilibrium lag time and eliminating the need for bias trimming, this device streamlines the amplifier's operation and enhances its overall efficiency. Additionally, its versatility extends to other applications, where it can effectively safeguard transistor die, further showcasing its value and utility

Hauptmerkmale

Enhanced noise reduction for superior clarity
Fully encapsulated design for moisture resistance
Superior thermal management and reliability

Anwendung

Top-of-the-line sound reinforcement
High-performance studio monitors

Spezifikationen

Source Content uid	NJL1302DG	Pbfree Code	Yes
Part Life Cycle Code	Active	Pin Count	5
Reach Compliance Code	not_compliant	ECCN Code	EAR99
Factory Lead Time	50 Weeks	Additional Feature	HIGH RELIABILITY
Collector Current-Max (IC)	15 A	Collector-Emitter Voltage-Max	260 V
Configuration	SINGLE WITH BUILT-IN DIODE	DC Current Gain-Min (hFE)	45
JESD-30 Code	R-PSFM-T5	JESD-609 Code	e3
Number of Elements	1	Number of Terminals	5
Operating Temperature-Max	150 °C	Polarity/Channel Type	PNP
Power Dissipation-Max (Abs)	200 W	Qualification Status	Not Qualified
Surface Mount	NO	Terminal Finish	MATTE TIN
Terminal Form	THROUGH-HOLE	Terminal Position	SINGLE
Transistor Application	AMPLIFIER	Transistor Element Material	SILICON
Transition Frequency-Nom (fT)	30 MHz	Product Category	Bipolar Transistors - BJT
Mounting Style	Through Hole	Transistor Polarity	PNP
Collector- Emitter Voltage VCEO Max	260 V	Collector- Base Voltage VCBO	260 V
Emitter- Base Voltage VEBO	5 V	Collector-Emitter Saturation Voltage	3 V
Maximum DC Collector Current	15 A	Pd - Power Dissipation	200 W
Gain Bandwidth Product fT	30 MHz	Minimum Operating Temperature	- 65 C
Maximum Operating Temperature	+ 150 C	Series	NJL1302D
DC Collector/Base Gain hfe Min	75	Height	25.98 mm
Length	19.89 mm	Product Type	BJTs - Bipolar Transistors
Factory Pack Quantity	25	Subcategory	Transistors
Technology	Si	Width	4.89 mm
Unit Weight	0.010582 oz

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Verpackung

AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..