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Siehe Technische Spezifikationen

NJW21194G +BOM

Bipolar (BJT) Transistor NPN 250 V 16 A 4MHz 200 W Through Hole TO-3P-3L

Hersteller:

onsemi
Herstellerteil #:

NJW21194G
Datenblatt:

NJW21194G Datenblatt (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Pin Count:

3
Reach Compliance Code:

not_compliant
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an NJW21194G

NJW21194G Allgemeine Beschreibung

Housed in a TO-3P package, the NJW21194G not only provides excellent thermal performance but also makes mounting a breeze. Its high gain and low saturation voltage are ideal for high-fidelity audio amplifiers where minimizing distortion is of utmost importance. Additionally, its high collector current capability makes it a perfect choice for power switching applications in various industries

Hauptmerkmale

Fully insulated to prevent heat transfer
Ergonomic design with comfortable grip
Durable construction with rust-resistance
Easy-clean surface design

Anwendung

Powerful audio amplifier solution
Ideal for professional audio use
Low distortion, high reliability

Spezifikationen

Source Content uid	NJW21194G	Pbfree Code	Yes
Part Life Cycle Code	Active	Pin Count	3
Reach Compliance Code	not_compliant	ECCN Code	EAR99
Factory Lead Time	48 Weeks	Collector Current-Max (IC)	16 A
Collector-Emitter Voltage-Max	250 V	Configuration	SINGLE
DC Current Gain-Min (hFE)	8	JESD-30 Code	R-PSFM-T3
JESD-609 Code	e3	Number of Elements	1
Number of Terminals	3	Operating Temperature-Max	150 °C
Polarity/Channel Type	NPN	Power Dissipation-Max (Abs)	200 W
Qualification Status	Not Qualified	Surface Mount	NO
Terminal Finish	MATTE TIN	Terminal Form	THROUGH-HOLE
Terminal Position	SINGLE	Transistor Application	AMPLIFIER
Transistor Element Material	SILICON	Transition Frequency-Nom (fT)	4 MHz
Product Category	Bipolar Transistors - BJT	REACH	Details
Mounting Style	Through Hole	Transistor Polarity	NPN
Collector- Emitter Voltage VCEO Max	250 V	Collector- Base Voltage VCBO	400 V
Emitter- Base Voltage VEBO	5 V	Collector-Emitter Saturation Voltage	1.4 V
Maximum DC Collector Current	16 A	Pd - Power Dissipation	200 W
Gain Bandwidth Product fT	4 MHz	Minimum Operating Temperature	- 65 C
Maximum Operating Temperature	+ 150 C	Series	NJW21194
DC Collector/Base Gain hfe Min	20	DC Current Gain hFE Max	80
Height	18.7 mm	Length	15.6 mm
Product Type	BJTs - Bipolar Transistors	Factory Pack Quantity	30
Subcategory	Transistors	Technology	Si
Width	4.8 mm	Unit Weight	0.238311 oz

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AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..