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Siehe Technische Spezifikationen

UMC2NT1G +BOM

Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 150mW Surface Mount SC-88A (SC-70-5/SOT-353)

Hersteller:

ON Semiconductor, LLC
Herstellerteil #:

UMC2NT1G
Datenblatt:

UMC2NT1G Datenblatt (PDF)
Transistor Type:

1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):

100mA
Voltage - Collector Emitter Breakdown (Max):

50V
Resistor - Base (R1):

22kOhms
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an UMC2NT1G

UMC2NT1G Allgemeine Beschreibung

The Dual PNP Bipolar Digital Transistor contains a single transistor with a monolithic bias network consisting of two resistors: a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The Dual PNP Bipolar Digital Transistor eliminates these individual components by integrating them into a single device. In the UMC2NT1 series, two devices are housed in the SOT-353 package which is ideal for low power surface mount applications where board space is at a premium.

Hauptmerkmale

Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Available in 8 mm, 7 inch/3000 Unit Tape and Reel.
Pb-Free Packages are Available
NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

Spezifikationen

Category	Discrete Semiconductor ProductsTransistorsBipolar (BJT)Bipolar Transistor Arrays, Pre-Biased	Series	-
Transistor Type	1 NPN, 1 PNP - Pre-Biased (Dual)	Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	50V	Resistor - Base (R1)	22kOhms
Resistor - Emitter Base (R2)	22kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic	250mV @ 300µA, 10mA	Current - Collector Cutoff (Max)	500nA
Frequency - Transition	-	Power - Max	150mW
Mounting Type	Surface Mount	Base Product Number	MC2

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