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MRF6V14300HR3 +BOM

Transistor designed for frequencies up to 1400MHz

Hersteller:

NXP
Herstellerteil #:

MRF6V14300HR3
Datenblatt:

MRF6V14300HR3 Datenblatt (PDF)
Transistor Polarity:

N-Channel
Technology:

Si
Vds - Drain-Source Breakdown Voltage:

100 V
Minimum Operating Temperature:

- 65 C

MRF6V14300HR3 Allgemeine Beschreibung

The MRF6V14300HR3 is a top-of-the-line RF transistor, specifically engineered to meet the demands of high frequency applications. With its impressive frequency range of 136-941 MHz and a staggering peak output power of 300 Watts, this transistor is the ideal choice for military communications, radar systems, and broadcast transmitters. Its push-pull configuration ensures excellent linearity and efficiency, while the high gain of 20 dB and typical power gain of 12 dB further solidify its performance. Not to mention, the transistor boasts a collector efficiency of 60% and a minimum gain flatness of ±0.5 dB across the entire frequency range. Housed in a hermetic metal/ceramic package, the MRF6V14300HR3 offers enhanced reliability and ruggedness, making it suitable for operation in extreme environmental conditions. From high temperatures to harsh operating conditions, this transistor is built to withstand it all, making it a smart investment for any high frequency application

Spezifikationen

Product Category	RF MOSFET Transistors	Transistor Polarity	N-Channel
Technology	Si	Vds - Drain-Source Breakdown Voltage	100 V
Minimum Operating Temperature	- 65 C	Maximum Operating Temperature	+ 150 C
Channel Mode	Enhancement	Configuration	Single
Height	4.32 mm	Length	34.16 mm
Product Type	RF MOSFET Transistors	Series	MRF6V14300H
Factory Pack Quantity	250	Subcategory	MOSFETs
Type	RF Power MOSFET	Vgs - Gate-Source Voltage	- 6 V, 10 V
Width	9.91 mm	Unit Weight	0.227150 oz

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