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NSBC114YPDXV6T1G +BOM

Complementary Bipolar Digital Transistor (BRT)

Hersteller:

ON Semiconductor, LLC
Herstellerteil #:

NSBC114YPDXV6T1G
Datenblatt:

NSBC114YPDXV6T1G Datenblatt (PDF)
Transistor Type:

1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):

100mA
Voltage - Collector Emitter Breakdown (Max):

50V
Resistor - Base (R1):

10kOhms
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NSBC114YPDXV6T1G Allgemeine Beschreibung

The NSBC114YPDXV6T1G silicon NPN Bipolar Junction Transistor (BJT) is a versatile component ideal for high-speed switching applications. With a maximum collector current of 2A and maximum collector-base voltage of 120V, this transistor offers reliable performance in a compact SOT-223 package. Its fast switching speed and low saturation voltage make it a valuable asset in power supplies, motor control, voltage regulators, and various other switching circuits where efficiency and speed are paramount

Hauptmerkmale

Part number: NSX12P1G
Manufacturer: ON Semiconductor
Type: Power Transistor
Package: TO-3P
Configuration: Single
Polarity: NPN
Current rating: 1000mA

Spezifikationen

Category	Discrete Semiconductor ProductsTransistorsBipolar (BJT)Bipolar Transistor Arrays, Pre-Biased	Series	-
Transistor Type	1 NPN, 1 PNP - Pre-Biased (Dual)	Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	50V	Resistor - Base (R1)	10kOhms
Resistor - Emitter Base (R2)	47kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic	250mV @ 300µA, 10mA	Current - Collector Cutoff (Max)	500nA
Frequency - Transition	-	Power - Max	500mW
Mounting Type	Surface Mount	Base Product Number	NSBC114
Product Category	Bipolar Transistors - Pre-Biased	Configuration	Dual
Transistor Polarity	PNP	Typical Input Resistor	10 kOhms
Typical Resistor Ratio	0.21	Mounting Style	SMD/SMT
DC Collector/Base Gain hfe Min	80, 140	Collector- Emitter Voltage VCEO Max	50 V
Continuous Collector Current	100 mA	Peak DC Collector Current	100 mA
Pd - Power Dissipation	357 mW	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	DC Current Gain hFE Max	80
Height	0.55 mm	Length	1.6 mm
Product Type	BJTs - Bipolar Transistors - Pre-Biased	Factory Pack Quantity	4000
Subcategory	Transistors	Width	1.2 mm
Unit Weight	0.000106 oz

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